VBsemi Elec FQD50N06 VB N Channel 60V MOSFET with Trench Power Structure and High Temperature Rating
Key Attributes
Model Number:
FQD50N06-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
56A
Operating Temperature -:
-55℃~+175℃
RDS(on):
10mΩ@10V;13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
225pF
Number:
1 N-channel
Output Capacitance(Coss):
470pF
Input Capacitance(Ciss):
2.65nF
Pd - Power Dissipation:
136W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
FQD50N06-VB
Package:
TO-252
Product Description
Product Overview
The FQD50N06-VB is a N-Channel 60V MOSFET designed for high-performance applications. It features a Trench Power MOSFET structure, a high junction temperature rating of 175C, and low on-state resistance. This MOSFET is suitable for various power switching and control applications.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Material Categorization: RoHS Compliant, Halogen-Free
- Certifications: RoHS compliant (Directive 2011/65/EU), Halogen-Free (JEDEC JS709A, IEC 61249-2-21)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| PRODUCT SUMMARY | ||||||
| RDS(on) | VGS = 10 V | 0.010 | Ω | |||
| RDS(on) | VGS = 4.5 V | 0.013 | Ω | |||
| VDS | 60 | V | ||||
| ID | a | 58 | A | |||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 25 C b | 100 | A | ||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 100 C b | 50 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Continuous Source Current (Diode Conduction) | IS | a | 58 | A | ||
| Avalanche Current | AS | 50 | A | |||
| Single Avalanche Energy (Duty Cycle ≤ 1 %) | EAS | L = 0.1 mH | 125 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25 C b | 136 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Maximum Junction-to-Ambient | RthJA | t ≤10 sec c | 15 | 18 | °C/W | |
| Maximum Junction-to-Ambient | RthJA | Steady State | 40 | 50 | °C/W | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | ||
| SPECIFICATIONS | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 µA | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 1 | 3 | V | |
| Gate-Body Leakage | IGSS | VGS = ± 20 V, VDS = 0 V | ± 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 50 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 250 | µA | ||
| On-State Drain Current | ID(on) | b VDS = 5 V, VGS = 10 V | 60 | A | ||
| Drain-Source On-State Resistance | RDS(on) | b VGS = 10 V, ID = 20 A | 0.010 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | b VGS = 10 V, ID = 20 A, TJ = 125 °C | 0.016 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | b VGS = 10 V, ID = 20 A, TJ = 175 °C | 0.020 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | b VGS = 4.5 V, ID = 15 A | 0.013 | Ω | ||
| Forward Transconductance | gfs | b VDS = 15 V, ID = 20 A | 60 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2650 | pF | ||
| Output Capacitance | Coss | 470 | pF | |||
| Reverse Transfer Capacitance | Crss | 225 | pF | |||
| Total Gate Charge | Qg | c VDS = 30 V, VGS = 10 V, ID = 50 A | 47 | 70 | nC | |
| Gate-Source Charge | Qgs | c | 10 | nC | ||
| Gate-Drain Charge | Qgd | c | 12 | nC | ||
| Turn-On Delay Time | td(on) | c VDD = 30 V, RL = 0.6 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 10 | 20 | ns | |
| Rise Time | tr | c | 15 | 25 | ns | |
| Turn-Off Delay Time | td(off) | c | 35 | 50 | ns | |
| Fall Time | tf | c | 20 | 30 | ns | |
| Source-Drain Diode Ratings and Characteristics | ||||||
| Pulsed Current | IS M | 58 | A | |||
| Diode Forward Voltage | VSD | IF = 20 A, VGS = 0 V | 1 | 1.5 | V | |
| Reverse Recovery Time | trr | IF = 20 A, di/dt = 100 A/µs | 45 | 100 | ns | |
2504171620_VBsemi-Elec-FQD50N06-VB_C725048.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
