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quality 650V trench stop IGBT SPTECH IKW50N65H5 offering high avalanche ruggedness and low conduction losses factory
quality 650V trench stop IGBT SPTECH IKW50N65H5 offering high avalanche ruggedness and low conduction losses factory

650V trench stop IGBT SPTECH IKW50N65H5 offering high avalanche ruggedness and low conduction losses

Key Attributes
Model Number: IKW50N65H5
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
170ns
Operating Temperature:
-40℃~+150℃
Td(on):
60ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
3.8nF@30V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
162nC@15V
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
600uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
IKW50N65H5
Package:
TO-247-3
Product Description

Product Overview

The IKW50N65H5 650V Trench Field Stop IGBT offers low switching losses, high energy efficiency, and high avalanche ruggedness. Its Trench-Stop Technology ensures high-speed switching, robust performance, low VCEsat, and easy parallel switching capability. This IGBT is ideal for motion control, solar applications, and welding machines.

Product Attributes

  • Brand: SPTECH
  • Product Code: IKW50N65H5
  • Package: TO247
  • Packaging: Tube
  • Website: http://www.zhichaowei.com/

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum Ratings
Collector-Emitter Breakdown VoltageVCE650VTj= 25 unless otherwise specified
DC collector current, limited by TjmaxIC100 / 50ATC = 25C / 100C
Diode Forward current, limited by TjmaxIF100 / 50ATC = 25C / 100C
Turn off safe operating area200AVCE 650V, Tj 150C
Power dissipation, Tj=25Ptot260WTj=25
Operating junction temperatureTj-40...+150C
Storage temperatureTs-55...+150C
Soldering temperature, wave soldering 1.6mm from case for 10s260C
Thermal Resistance
IGBT thermal resistance, junction - caseR(j-c)0.48K/W
Diode thermal resistance, junction - caseR(j-c)1.1K/W
Thermal resistance, junction - ambientR(j-a)40K/W
Electrical Characteristics (IGBT)
Static Collector-Emitter Breakdown VoltageBVCES650VVGE=0V , IC=250uA / 1mA
Gate Threshold VoltageVGE(th)4.0 / 5.0 / 6.0VVGE=VCE, IC=250uA
Collector-Emitter Saturation VoltageVCE(sat)1.65 / 2.05VVGE=15V, IC=50A, Tj = 25C / 150C
Zero gate voltage collector currentICES0.1 / 40 / 1000AVCE = 650V, VGE = 0V, Tj = 25C / 150C
Gate-emitter leakage currentIGES100nAVCE = 0V, VGE = 20V
Transconductancegfs50SVCE = 20V, IC = 50A
Dynamic Characteristics (IGBT)
Input capacitanceCies3800pFVCE = 30V, VGE = 0V, f = 1MHz
Output capacitanceCoes130pFVCE = 30V, VGE = 0V, f = 1MHz
Reverse transfer capacitanceCres70pFVCE = 30V, VGE = 0V, f = 1MHz
Gate chargeQG162nCVCC = 520V, IC = 50A, VGE = 15V
Switching Characteristics (Inductive Load, Tj=25)
Turn-on Delay Timetd(on)60nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Rise Timetr55nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-off Delay Timetd(off)170nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Fall Timetf80nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-on EnergyEon2.2mJVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-off EnergyEoff0.6mJVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Switching Characteristics (Inductive Load, Tj=150)
Turn-on Delay Timetd(on)60nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Rise Timetr60nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-off Delay Timetd(off)172nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Fall Timetf90nsVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-on EnergyEon2.35mJVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Turn-off EnergyEoff0.82mJVCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12
Electrical Characteristics of the DIODE
Diode Forward VoltageVFM2.4VIF = 50A, Tj = 25
Reverse Recovery TimeTrr90nsIF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25
Reverse Recovery CurrentIrr17AIF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25
Reverse Recovery ChargeQrr900nCIF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25

2505231205_SPTECH-IKW50N65H5_C5369330.pdf

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