1200V 20A Trench Field Stop IGBT SPTECH SPT20N120F1 with low VCE SAT and enhanced avalanche capability
Key Attributes
Model Number:
SPT20N120F1
Product Custom Attributes
Pd - Power Dissipation:
208W
Td(off):
300ns
Operating Temperature:
-40℃~+150℃
Td(on):
60ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@0.25mA
Gate Charge(Qg):
140nC@15V
Reverse Recovery Time(trr):
270ns
Switching Energy(Eoff):
430uJ
Turn-On Energy (Eon):
2.5mJ
Mfr. Part #:
SPT20N120F1
Package:
TO-247-3
Product Description
Product Overview
The SPT20N120F1 is a 1200V / 20A Trench Field Stop IGBT featuring high breakdown voltage for improved reliability. Its Trench-Stop Technology offers very tight parameter distribution, high ruggedness with temperature-stable behavior, a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche capability and soft current turn-off waveforms. Applications include inductive cooking, inverterized microwave ovens, resonant converters, and soft switching applications.
Product Attributes
- Packaging: TO247 Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current, limited by Tjmax | IC | 40 / 20 | A | TC = 25C / 100C |
| Diode Forward current, limited by Tjmax | IF | 40 / 20 | A | TC = 25C / 100C |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 60 | A | |
| Turn off safe operating area | - | - 60 | A | VCE 1200V, Tj 150C |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE= 15V, VCE 600V |
| Power dissipation, Tj=25 | Ptot | 208 | W | |
| Operating junction temperature | Tj | -40...+150 | C | |
| Storage temperature | Ts | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | 260 | C | |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.64 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.5 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Electrical Characteristics of the IGBT (Tj= 25 unless otherwise specified) | ||||
| Static Collector-Emitter breakdown voltage | BVCES | 1200 | V | VGE=0V , IC=250A |
| Gate threshold voltage | VGE(th) | 5.2 / 6.0 / 6.8 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation voltage | VCE(sat) | 1.9 / 2.3 | V | VGE=15V, IC=20A, Tj = 25C / 150C |
| Zero gate voltage collector current | ICES | 100 / 1000 | A | VCE = 1200V, VGE = 0V, Tj = 25C / 150C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 13 | S | VCE=20V, IC=20A |
| Dynamic Characteristics of the IGBT | ||||
| Input capacitance | Cies | 1870 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 72 | pF | |
| Reverse transfer capacitance | Cres | 48 | pF | |
| Gate charge | QG | 140 | nC | VCC = 960V, IC = 20A, VGE = 15V |
| Short circuit collector current | ICSC | 140 | A | VGE=15V,tSC10us, VCC=600V, Tjstart=25C |
| Switching Characteristic, Inductive Load (at Tj = 25C) | ||||
| Turn-on delay time | td(on) | 60 | ns | VCC = 600V, IC = 20A, VGE = 0/15V, Rg=42 |
| Rise time | tr | 22 | ns | |
| Turn-on energy | Eon | 2.5 | mJ | |
| Turn-off delay time | td(off) | 300 | ns | |
| Fall time | tf | 180 | ns | |
| Turn-off energy | Eoff | 0.43 | mJ | |
| Electrical Characteristics of the DIODE (Tj= 25 unless otherwise specified) | ||||
| Diode Forward Voltage | VFM | 2.9 | V | IF = 20A |
| Reverse Recovery Time | Trr | 270 | ns | IF= 15A, di/dt= 600A/s |
| Reverse Recovery Current | Irr | 10 | A | |
| Reverse Recovery Charge | Qrr | 1800 | nC | |
2505231205_SPTECH-SPT20N120F1_C480177.pdf
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