3A 50V to 600V Rectifier Taiwan Semiconductor ES3DHV6G Suitable for Automated Placement and Circuits
Key Attributes
Model Number:
ES3DHV6G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Reverse Leakage Current (Ir):
10uA@200V
Voltage - Forward(Vf@If):
950mV@3A
Current - Rectified:
3A
Mfr. Part #:
ES3DHV6G
Package:
DO-214AB(SMC)
Product Description
Product Overview
The ES3AH ES3JH series from Taiwan Semiconductor are 3A, 50V - 600V Super Fast Surface Mount Rectifiers. These AEC-Q101 qualified rectifiers feature a glass passivated chip junction, ideal for automated placement, and offer super fast recovery time for high efficiency. They are moisture sensitivity level 1 and RoHS compliant, making them suitable for DC to DC converters, automotive applications, car lighting, snubber circuits, and freewheeling applications.
Product Attributes
- Brand: Taiwan Semiconductor
- Origin: Taiwan
- Certifications: AEC-Q101 qualified, RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Material: Glass passivated chip junction, Molding compound meets UL 94V-0 flammability rating, Matte tin plated leads
Technical Specifications
| Parameter | Symbol | ES3AH | ES3BH | ES3CH | ES3DH | ES3FH | ES3GH | ES3HH | ES3JH | Unit | |
| Marking code on the device | ES3A | ES3B | ES3C | ES3D | ES3F | ES3G | ES3H | ES3J | |||
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | V | |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | V | |
| Forward current | IF | 3 | A | ||||||||
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 100 | A | ||||||||
| Junction temperature | TJ | - 55 to +150 | C | ||||||||
| Storage temperature | TSTG | - 55 to +150 | C | ||||||||
| Forward voltage (IF = 3A, TJ = 25C) | VF | - 0.95 | - 1.30 | - 1.70 | V | ||||||
| Reverse current @ rated VR (TJ = 25C) | IR | - 10 | A | ||||||||
| Reverse current @ rated VR (TJ = 100C) | IR | - 500 | A | ||||||||
| Junction capacitance (1MHz, VR = 4.0V) | CJ | 45 | 30 | pF | |||||||
| Reverse recovery time (IF = 0.5A, IR = 1.0A, Irr = 0.25A) | trr | - 35 | ns | ||||||||
| Junction-to-lead thermal resistance | RJL | 12 | C/W | ||||||||
| Junction-to-ambient thermal resistance | RJA | 47 | C/W | ||||||||
| Package | DO-214AB (SMC) | ||||||||||
| Configuration | Single die | ||||||||||
2205311716_Taiwan-Semiconductor-ES3DHV6G_C3028979.pdf
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