Phase Control Thyristor VISHAY VS-ST1200C20K1 Suitable for DC Motor Controls and AC Power Regulation
Key Attributes
Model Number:
VS-ST1200C20K1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
1.73V
Current - On State(It(RMS)):
3.08kA
Peak Off - State Voltage(Vdrm):
2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST1200C20K1
Package:
TO-200AC
Product Description
Product Overview
The Vishay Semiconductors VS-ST1200C..K Series are high-performance Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed for industrial-level applications, these thyristors offer robust performance with a high profile hockey PUK package (International standard case K-PUK A-24). They are ideal for demanding applications such as DC motor controls, controlled DC power supplies, and AC controllers.
Product Attributes
- Brand: Vishay Semiconductors
- Case Style: K-PUK (A-24)
- Material Categorization: For definitions of compliance, please see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Conditions | Values | Units | ||
|---|---|---|---|---|---|
| Primary Characteristics | |||||
| Average On-State Current (IT(AV)) | 1650 | A | |||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 1200, 1400, 1600, 1800, 2000 | V | |||
| Peak On-State Voltage (VTM) | 1.73 | V | |||
| Gate Trigger Current (IGT) | 100 | mA | |||
| Operating Junction Temperature (TJ) | -40 to +125 | C | |||
| Package | K-PUK (A-24) | ||||
| Circuit Configuration | Single SCR | ||||
| Major Ratings and Characteristics | |||||
| Average On-State Current (IT(AV)) | Ths = 55 C | 1650 | A | ||
| RMS On-State Current (IT(RMS)) | Ths = 25 C | 3080 | A | ||
| Peak Surge Current (ITSM) | 50 Hz, t = 10 ms | 30 500 | A | ||
| Peak Surge Current (ITSM) | 60 Hz, t = 8.3 ms | 32 000 | A | ||
| It for fusing | 50 Hz, t = 10 ms | 4651 | kAs | ||
| It for fusing | 60 Hz, t = 8.3 ms | 4250 | kAs | ||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 1200 to 2000 | V | |||
| Typical Turn-off Time (tq) | 200 | s | |||
| Operating Junction Temperature (TJ) | -40 to +125 | C | |||
| Voltage Ratings | |||||
| Type Number | Voltage Code | VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage | VRSM, Maximum Non-Repetitive Peak Voltage | IDRM/IRRM Maximum at TJ = TJ Maximum | mA |
| VS-ST1200C..K | 12 | 1200 | 1300 | 100 | |
| VS-ST1200C..K | 14 | 1400 | 1500 | ||
| VS-ST1200C..K | 16 | 1600 | 1700 | ||
| VS-ST1200C..K | 18 | 1800 | 1900 | ||
| VS-ST1200C..K | 20 | 2000 | 2100 | ||
| Absolute Maximum Ratings | |||||
| Maximum average on-state current (IT(AV)) | 180 conduction, half sine wave, double side (single side) cooled | 1650 (700) | A | ||
| Heatsink Temperature | 55 (85) | C | |||
| Maximum RMS on-state current (IT(RMS)) | DC at 25 C heatsink temperature, double side cooled | 3080 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 30 500 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 32 000 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, 100 % VRRM reapplied | 25 700 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, 100 % VRRM reapplied | 26 900 | A | ||
| Maximum It for fusing | t = 10 ms, No voltage reapplied | 4651 | kAs | ||
| Maximum It for fusing | t = 8.3 ms, No voltage reapplied | 4250 | kAs | ||
| Maximum It for fusing | t = 10 ms, 100 % VRRM reapplied | 3300 | kAs | ||
| Maximum It for fusing | t = 8.3 ms, 100 % VRRM reapplied | 3000 | kAs | ||
| Maximum It for fusing | t = 0.1 ms to 10 ms, no voltage reapplied | 46 510 | kAs | ||
| Low level value of threshold voltage (VT(TO)1) | TJ = TJ maximum | 0.91 | V | ||
| High level value of threshold voltage (VT(TO)2) | TJ = TJ maximum | 1.01 | V | ||
| Low level value of on-state slope resistance (rt1) | TJ = TJ maximum | 0.21 | m | ||
| High level value of on-state slope resistance (rt2) | TJ = TJ maximum | 0.19 | m | ||
| Maximum on-state voltage (VTM) | Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse | 1.73 | V | ||
| Maximum holding current (IH) | TJ = 25 C, anode supply 12 V resistive load | 600 | mA | ||
| Typical latching current (IL) | 1000 | ||||
| Switching Parameter | |||||
| Maximum non-repetitive rate of rise of turned-on current (dI/dt) | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s | ||
| Typical delay time (td) | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.9 | s | ||
| Typical turn-off time (tq) | ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 , tp = 500 s | 200 | s | ||
| Blocking Parameter | |||||
| Maximum critical rate of rise of off-state voltage (dV/dt) | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s | ||
| Maximum peak reverse and off-state leakage current (IRRM, IDRM) | TJ = TJ maximum, rated VDRM/VRRM applied | 100 | mA | ||
| Triggering Parameter | TYP. | MAX. | |||
| Maximum peak gate power (PGM) | TJ = TJ maximum, tp 5 ms | 16 | W | ||
| Maximum average gate power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 3 | |||
| Maximum peak positive gate current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A | ||
| Maximum peak positive gate voltage (+VGM) | 20 | V | |||
| Maximum peak negative gate voltage (-VGM) | 5.0 | ||||
| DC gate current required to trigger (IGT) | 12 V anode to cathode applied, TJ = -40 C | 200 | - | mA | |
| DC gate current required to trigger (IGT) | 12 V anode to cathode applied, TJ = 25 C | 100 | 200 | mA | |
| DC gate current required to trigger (IGT) | 12 V anode to cathode applied, TJ = 125 C | 50 | - | mA | |
| DC gate voltage required to trigger (VGT) | TJ = -40 C | 1.4 | - | V | |
| DC gate voltage required to trigger (VGT) | TJ = 25 C | 1.1 | 3.0 | V | |
| DC gate voltage required to trigger (VGT) | TJ = 125 C | 0.9 | - | V | |
| DC gate current not to trigger (IGD) | TJ = TJ maximum | 10 | mA | ||
| DC gate voltage not to trigger (VGD) | TJ = TJ maximum | 0.25 | V | ||
| Thermal and Mechanical Specifications | |||||
| Maximum operating junction temperature range (TJ) | -40 to 125 | C | |||
| Maximum storage temperature range (TStg) | -40 to 150 | C | |||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation single side cooled | 0.042 | K/W | ||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation double side cooled | 0.021 | K/W | ||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation single side cooled | 0.006 | |||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation double side cooled | 0.003 | |||
| Mounting force | 10 % | 500 (2500) | N (kg) | ||
| Approximate weight | 425 | g | |||
| Case style | K-PUK (A-24) | ||||
| Ordering Information | |||||
| Device Code | VS-ST1200C20K | ||||
| Dimensions | |||||
| DIA. MAX. | 74.5 (2.9) | ||||
| Holes DIA. | 3.5 (0.14) x 2.1 (0.1) deep | ||||
| NOM. | 4.75 (0.2) | ||||
| 44 (1.73) | |||||
| Creepage distance: minimum | 28.88 (1.137) | ||||
| Strike distance: minimum | 17.99 (0.708) | ||||
| DIA. MAX. | 47.5 (1.87) | ||||
| MAX. | 27.5 (1.08) | ||||
| DIA. MAX. | 67 (2.6) | ||||
| Pin receptacle MIN. | 1 (0.04) |
2411272144_VISHAY-VS-ST1200C20K1_C17691413.pdf
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