VISHAY VS-ST1230C16K0 phase control thyristor center amplifying gate metal case suitable for DC power supplies

Name: VISHAY VS-ST1230C16K0 phase control thyristor center amplifying gate metal case suitable for DC power supplies
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: VS-ST1230C16K0
Availability: InStock

Key Attributes

Model Number: VS-ST1230C16K0

Product Custom Attributes

Holding Current (Ih):

600mA

Current - Gate Trigger(Igt):

200mA

Voltage - On State(Vtm):

1.62V

Current - On State(It(RMS)):

3.2kA

Peak Off - State Voltage(Vdrm):

1.6kV

SCR Type:

1 SCR

Operating Temperature:

-40℃~+125℃

Gate Trigger Voltage (Vgt):

Mfr. Part #:

VS-ST1230C16K0

Package:

TO-200AC

Product Description

Product Overview

The Vishay Semiconductors VS-ST1230C..K Series Phase Control Thyristors, in a high profile hockey PUK version with a metal case and ceramic insulator, are designed and qualified for industrial level applications. Featuring a center amplifying gate, these thyristors are suitable for DC motor controls, controlled DC power supplies, and AC controllers. They offer robust performance with high average on-state current ratings and a wide range of voltage options.

Product Attributes

Brand: Vishay Semiconductors
Series: VS-ST1230C..K
Case Style: K-PUK (A-24)
Gate Type: Center amplifying gate
Insulation: Metal case with ceramic insulator
Material Compliance: Refer to www.vishay.com/doc?99912 for definitions of compliance

Technical Specifications

Parameter	Symbol	Test Conditions	Values	Units
Primary Characteristics
Average On-State Current	IT(AV)		1745	A
Repetitive Peak Off-State Voltage / Repetitive Peak Inverse Voltage	VDRM/VRRM		800, 1200, 1400, 1600	V
On-State Voltage	VTM	Ipk = 4000 A, tp = 10 ms sine pulse	1.62	V
Gate Trigger Current	IGT	TJ = 25 C	100	mA
Operating Junction Temperature	TJ		-40 to +125	C
Package			K-PUK (A-24)
Circuit Configuration			Single SCR
Major Ratings and Characteristics
Average On-State Current	IT(AV)	Ths = 55 C	1745	A
RMS On-State Current	IT(RMS)	Ths = 25 C	3200	A
Peak Surge Current (50 Hz)	ITSM	t = 10 ms	33 500	A
Peak Surge Current (60 Hz)	ITSM	t = 8.3 ms	35 100	A
It (50 Hz)	It		5615	kAs
It (60 Hz)	It		5126	kAs
Repetitive Peak Off-State Voltage / Repetitive Peak Inverse Voltage	VDRM/VRRM		800 to 1600	V
Typical Turn-off Time	tq		200	s
Voltage Ratings
Type Number	Voltage Code	VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage (V)	VRSM, Maximum Non-Repetitive Peak Voltage (V)	IDRM/IRRM Maximum at TJ = TJ Maximum (mA)
VS-ST1230C..K	08	800	900	100
VS-ST1230C..K	12	1200	1300	14
VS-ST1230C..K	14	1400	1500	16
VS-ST1230C..K	16	1600	1700
Absolute Maximum Ratings
Maximum average on-state current at heatsink temperature	IT(AV)	180 conduction, half sine wave, double side cooled	1745 (700)	A (55 (85) C)
Maximum RMS on-state current	IT(RMS)	DC at 25 C heatsink temperature, double side cooled	3200	A
Maximum peak, one-cycle non-repetitive surge current (t = 10 ms, no voltage reapplied)	ITSM	Sinusoidal half wave, initial TJ = TJ maximum	33 500	A
Maximum It for fusing (t = 10 ms, no voltage reapplied)	It		5615	kAs
Maximum It for fusing	It	t = 0.1 to 10 ms, no voltage reapplied	56 150	kAs
Low level value of threshold voltage	VT(TO)1	TJ = TJ maximum	0.93	V
High level value of threshold voltage	VT(TO)2	TJ = TJ maximum	1.02	V
Low level value of on-state slope resistance	rt1	TJ = TJ maximum	0.17	m
High level value of on-state slope resistance	rt2	TJ = TJ maximum	0.16	m
Maximum on-state voltage	VTM	Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse	1.62	V
Maximum holding current	IH	TJ = 25 C, anode supply 12 V resistive load	600	mA
Typical latching current	IL		1000	mA
Switching Parameter
Maximum non-repetitive rate of rise of turned-on current	dI/dt	Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM	1000	A/s
Typical delay time	td	Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C	1.9	s
Typical turn-off time	tq	ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V, 100 , tp = 500 s	200	s
Blocking Parameter
Maximum critical rate of rise of off-state voltage	dV/dt	TJ = TJ maximum linear to 80 % rated VDRM	500	V/s
Maximum peak reverse and off-state leakage current	IRRM, IDRM	TJ = TJ maximum, rated VDRM/VRRM applied	100	mA
Triggering Parameter
Maximum peak gate power	PGM	TJ = TJ maximum, tp 5 ms	16	W
Maximum average gate power	PG(AV)	TJ = TJ maximum, f = 50 Hz, d% = 50	3	W
Maximum peak positive gate current	IGM	TJ = TJ maximum, tp 5 ms	3.0	A
Maximum peak positive gate voltage	+VGM		20	V
Maximum peak negative gate voltage	-VGM		5.0	V
DC gate current required to trigger	IGT	TJ = -40 C	200	mA
DC gate current required to trigger	IGT	TJ = 25 C	100	mA
DC gate current required to trigger	IGT	TJ = 125 C	50	-
DC gate voltage required to trigger	VGT	TJ = -40 C	1.4	V
DC gate voltage required to trigger	VGT	TJ = 25 C	1.1	V
DC gate voltage required to trigger	VGT	TJ = 125 C	0.9	V
DC gate current not to trigger	IGD	TJ = TJ maximum	10	mA
DC gate voltage not to trigger	VGD		0.25	V
Thermal and Mechanical Specifications
Maximum operating junction temperature range	TJ		-40 to 125	C
Maximum storage temperature range	TStg		-40 to 150	C
Maximum thermal resistance, junction to heatsink (DC operation, single side cooled)	RthJ-hs		0.042	K/W
Maximum thermal resistance, junction to heatsink (DC operation, double side cooled)	RthJ-hs		0.021	K/W
Maximum thermal resistance, case to heatsink (DC operation, single side cooled)	RthC-hs		0.006	K/W
Maximum thermal resistance, case to heatsink (DC operation, double side cooled)	RthC-hs		0.003	K/W
Mounting force			500 (2500)	N (kg)
Approximate weight			425	g

Ordering Information:

Device code: ST1230C..K

Example: VS-ST1230C16K1-1

Structure:

VS- Vishay Semiconductors product
ST123 Essential part number
0 Converter grade
C Ceramic PUK
16 Voltage code x 100 = VRRM (e.g., 16 for 1600 V)
K PUK case K-PUK (A-24)
1 Fast-on terminals (gate and auxiliary cathode unsoldered leads)
-1 Critical dV/dt: 1000 V/s (special selection)

Links to Related Documents:

Dimensions: www.vishay.com/doc?95081

2411272147_VISHAY-VS-ST1230C16K0_C17681688.pdf

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