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quality High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications factory
quality High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications factory

High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications

Key Attributes
Model Number: PHE13005,127
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
100uA
DC Current Gain:
10@2A,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
1V@4A,1A
Type:
NPN
Pd - Power Dissipation:
75W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHE13005,127
Package:
TO-220AB
Product Description

Product Overview

The PHE13005 is a high voltage, high speed NPN planar-passivated power switching transistor designed for electronic lighting ballast applications. It offers fast switching and high voltage capability, making it suitable for demanding electronic lighting systems.

Product Attributes

  • Brand: WeEn Semiconductors
  • Material: Silicon diffused
  • Package Type: SOT78 (TO-220AB)

Technical Specifications

SymbolParameterConditionsValuesUnit
Absolute Maximum Ratings
VCESMPeak collector-emitter voltageVBE = 0 V700V
VCBOCollector-base voltageIE = 0 A700V
VCEOCollector-emitter voltageIB = 0 A400V
ICCollector current (DC)DC; Fig. 1; Fig. 2; Fig. 44A
ICMPeak collector current8A
IBBase current (DC)2A
IBMPeak base current4A
PtotTotal power dissipationTmb 25 C; Fig. 375W
TstgStorage temperature-65 to 150C
TjJunction temperature150C
VEBOEmitter-base voltageIC = 0 A9V
Static Characteristics
ICESCollector-emitter cut-off currentVBE = -1.5 V; VCE = 700 V; Tmb = 25 C-1 mA
ICESCollector-emitter cut-off currentVBE = -1.5 V; VCE = 700 V; Tj = 125 C-5 mA
ICBOCollector-base cut-off currentVCB = 700 V; IE = 0 A; Tmb = 25 C-1 mA
ICEOCollector-emitter cut-off currentVCEO = 400 V; IB = 0 A; Tmb = 25 C-0.1 mA
IEBOEmitter-base cut-off currentVEB = 9 V; IC = 0 A; Tmb = 25 C-1 mA
VCEOsusCollector-emitter sustaining voltageIB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 C; Fig. 6; Fig. 7400V
VCEsatCollector-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 8; Fig. 9-0.5 V
VCEsatCollector-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 8; Fig. 9-0.6 V
VCEsatCollector-emitter saturation voltageIC = 4.0 A; IB = 1.0 A; Tmb = 25 C; Fig. 8; Fig. 9-1 V
VBEsatBase-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 10-1.2 V
VBEsatBase-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 10-1.6 V
hFEDC current gainIC = 1 A; VCE = 5 V; Tmb = 25 C; Fig. 1112 to 40
hFEDC current gainIC = 2 A; VCE = 5 V; Tmb = 25 C; Fig. 1110 to 28
Dynamic Characteristics
tsStorage timeIC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13-4 s
tsStorage timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15-2 s
tsStorage timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15-4 s
tfFall timeIC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13-0.9 s
tfFall timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15-0.5 s
tfFall timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15-0.9 s
Thermal Characteristics
Rth(j-mb)Thermal resistance from junction to mounting baseFig. 5-1.67 K/W
Rth(j-a)Thermal resistance from junction to ambientin free air-60 K/W

2408021544_WeEn-PHE13005-127_C78890.pdf

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