WeEn PHD13003C 412 NPN Power Transistor Featuring Integrated Diode for Electronic Lighting Ballasts
Key Attributes
Model Number:
PHD13003C,412
Product Custom Attributes
Current - Collector Cutoff:
100uA
DC Current Gain:
-
Transition Frequency(fT):
-
Number:
1 NPN
Vce Saturation(VCE(sat)):
1.5V@1.5A,0.5A
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHD13003C,412
Package:
TO-92
Product Description
WeEn Semiconductors PHD13003C NPN Power Transistor with Integrated Diode
The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability, such as compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.
Product Attributes
- Brand: WeEn Semiconductors
- Package: SOT54 (TO-92)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Description | ||||||
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead 25 C; see Figure 1 | - | - | 2.1 | W |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| Static Characteristics | ||||||
| hFE | DC current gain | IC = 0.5 A; VCE = 2 V; Tj = 25 C | 8 | 17 | 25 | - |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V | - | - | 1 | mA |
| ICEO | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V; Tj = 100 C | - | - | 5 | mA |
| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; see Figure 3; see Figure 4 | 400 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 C | - | - | 0.5 | V |
| VBEsat | Base-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 C | - | - | 1 | V |
| VF | Forward voltage | IF = 0.5 A; Tj = 25 C | - | - | 1.5 | V |
| Dynamic Characteristics | ||||||
| ton | Turn-on time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6 | - | - | 1 | s |
| ts | Storage time | IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; see Figure 7; see Figure 8 | - | 0.8 | - | s |
| tf | Fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6 | - | - | 0.7 | s |
| Thermal Characteristics | ||||||
| Rth(j-lead) | Thermal resistance from junction to lead | see Figure 2 | - | - | 60 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; printed-circuit board mounted; lead length = 4 mm | - | 150 | - | K/W |
2410121840_WeEn-PHD13003C-412_C253557.pdf
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