triac WEIDA T3035H-800B designed for robust electromagnetic interference resistance and current shock
Key Attributes
Model Number:
T3035H-800B
Product Custom Attributes
Holding Current (Ih):
45mA
Current - Gate Trigger(Igt):
35mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
30A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
300A@50Hz
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
T3035H-800B
Package:
TO-220B
Product Description
Product Overview
The T30**H series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high junction temperature applications, offering a high dv/dt rate and robust resistance to electromagnetic interference. These triacs excel in handling large current shock loading, making them ideal for inductive loads and high ambient temperature environments.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Origin: China
Technical Specifications
| Parameter | Symbol | T3035 Value | T3050 Value | Unit | Test Condition | Quadrant |
| Gate Trigger Current | IGT | MAX 35 | MAX 50 | mA | VD=12V, RL=33 | -- |
| Gate Trigger Voltage | VGT | 1.5 | V | |||
| Gate Non-trigger Voltage | VGD | MIN 0.2 | V | VD=VDRM | -- | |
| Holding Current | IH | MAX 45 | MAX 60 | mA | IT=100mA | |
| Latching Current | IL | MAX 50 | MAX 70 | mA | IG=1.2IGT | - |
| Latching Current | IL | 70 | 90 | mA | IG=1.2IGT | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG=2IGT) | ||
| Repetitive peak off-state voltage | VDRM | 600/800 | V | (Tj=25) | ||
| Repetitive peak reverse voltage | VRRM | 600/800 | V | (Tj=25) | ||
| RMS on-state current | IT(RMS) | 30 | A | |||
| Non repetitive surge peak on-state current | ITSM | 300 | A | (full cycle, F=50Hz) | ||
| I2t value for fusing | I2t | 340 | A2s | (tp=10ms) | ||
| Storage junction temperature range | Tstg | -40~150 | ||||
| Operating junction temperature range | Tj | -40~150 | ||||
| Peak gate current | IGM | 4 | A | |||
| Average gate power dissipation | PG(AV) | 1 | W | |||
| Peak gate power | PGM | 10 | W | |||
| On-state voltage | VTM | MAX 1.5 | V | ITM=35A, tp=380s, Tj=25 | ||
| Off-state current | IDRM/IRRM | MAX 10 | A | VDRM=VRRM, Tj=25 | ||
| Off-state current | IDRM/IRRM | 3 | mA | VDRM=VRRM, Tj=125 | ||
| Critical dV/dt | dV/dt | MIN 500/1000 | V/s | VD=2/3VDRM, Tj=150, Gate open | ||
| Junction to case thermal resistance | Rth(j-c) | 1.7 | /W | (AC), TO-220A(Ins | ||
2410122026_WEIDA-T3035H-800B_C22437006.pdf
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