surface mount rectifier Taiwan Semiconductor ES1B M2G with matte tin terminal plating and UL 94V 0 rating
Key Attributes
Model Number:
ES1B M2G
Product Custom Attributes
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
950mV@1A
Reverse Leakage Current (Ir):
5uA@100V
Current - Rectified:
1A
Mfr. Part #:
ES1B M2G
Package:
DO-214AC
Product Description
Product Overview
The ES1A ES1J series are super fast surface mount rectifiers from Taiwan Semiconductor, designed for high efficiency in various power applications. Featuring a glass passivated chip junction and ideal for automated placement, these rectifiers offer super fast recovery times. They are moisture sensitivity level 1 and RoHS compliant, making them suitable for a wide range of electronic designs including DC to DC converters, switching mode converters and inverters, lighting applications, snubber circuits, and freewheeling applications.
Product Attributes
- Brand: Taiwan Semiconductor
- Series: ES1A ES1J
- Package: DO-214AC (SMA)
- Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Material: Glass passivated chip junction
- Flammability Rating: UL 94V-0
- Terminal Plating: Matte tin
- Whisker Test: Meet JESD 201 class 2
Technical Specifications
| Parameter | Symbol | ES1A | ES1B | ES1C | ES1D | ES1F | ES1G | ES1H | ES1J | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | V | |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | V | |
| Forward current | IF | 1 | A | ||||||||
| Peak forward surge current, 8.3ms single half sine-wave | IFSM | 30 | A | ||||||||
| Junction temperature | TJ | -55 to +150 | C | ||||||||
| Storage temperature | TSTG | -55 to +150 | C | ||||||||
| Forward voltage | VF | - | - | - | - | - | - | - | - | V | IF = 1A, TJ = 25C |
| Forward voltage | VF | - 0.95 | - 1.30 | V | ES1A-ES1D, ES1F-ES1G, IF = 1A, TJ = 25C | ||||||
| Forward voltage | VF | - 1.70 | V | ES1H-ES1J, IF = 1A, TJ = 25C | |||||||
| Reverse current @ rated VR | IR | - 5 | A | TJ = 25C | |||||||
| Reverse current @ rated VR | IR | - 100 | A | TJ = 125C | |||||||
| Junction capacitance | CJ | 16 - | 18 - | pF | 1MHz, VR = 4.0V | ||||||
| Reverse recovery time | trr | - 35 | ns | IF = 0.5A, IR = 1.0A, Irr = 0.25A | |||||||
| Junction-to-lead thermal resistance | RJL | 35 | C/W | TYP | |||||||
| Junction-to-ambient thermal resistance | RJA | 85 | C/W | TYP | |||||||
2205311716_Taiwan-Semiconductor-ES1B-M2G_C3028978.pdf
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