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quality Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics factory
quality Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics factory
quality Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics factory
quality Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics factory

Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics

Key Attributes
Model Number: WSK55N20
Product Custom Attributes
Mfr. Part #:
WSK55N20
Package:
TO-263-2L
Product Description

Product Overview

The WSK55N20 is a high-performance N-Channel MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge characteristics. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: Winsok
  • Certifications: RoHS Compliant, Green Product
  • Testing: 100% UIS + Rg Tested, 100% EAS Guaranteed
  • Device Type: Lead Free and Green Devices Available

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Units
Drain-Source VoltageBVDSSVGS=0V , ID=250A200V
Static Drain-Source On-ResistanceRDS ONVGS=10V , ID=15A4855m
Gate Threshold VoltageVGS thVGS=VDS , ID=250A2.03.04.0V
Drain-Source Leakage CurrentIDSSVDS=200V , VGS=0V1.0A
Gate-Source Leakage CurrentIGSSVDS=0V , VGS=20V100nA
Forward TransconductancegfsVDS=40V , ID=15A24S
Gate ResistanceRG=1.0MHz25
Total Gate ChargeQgVDS=160V , VGS=10V , ID=28A105nC
Gate-Source ChargeQgs16
Gate-Drain ChargeQgd53
Turn-On Delay TimeTd onVDS=100V , VGS=10V , RL=1 , RGEN=2530ns
Rise TimeTr263
Turn-Off Delay TimeTd off311
Fall TimeTf222
Input CapacitanceCissVDS=25V , VGS=0V , =1.0MHz2926pF
Output CapacitanceCoss371
Reverse Transfer CapacitanceCrss219
Continuous Source CurrentIS55A
Diode Forward VoltageVSDVGS=0V , IS=1A1.4V
Reverse Recovery TimetrrIF=20A , di/dt=500A/s220ns
Reverse Recovery ChargeQrr2.0nC
Continuous Drain CurrentIDTC=25C55A
Continuous Drain CurrentIDTC=100C45A
Pulse Drain CurrentIDM200A
Power DissipationPDTC=25C158W
Single pulse Avalanche CurrentIAS30A
Single pulse Avalanche EnergyEASL=0.3mH800mJ
Storage Temperature RangeTSTG-55150C
Operating Junction Temperature RangeTJ-55150C
Thermal Resistance-Junction to AmbientRJAt10s20C/W
Thermal Resistance-Junction to AmbientRJASteady State62
Thermal Resistance-Junction to CaseRJC1.3W

2510131755_Winsok-Semicon-WSK55N20_C52034115.pdf

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