High Current Trench IGBT SPTECH SPT200N65F1A1 650V 200A for Automotive and Power Module Applications
Key Attributes
Model Number:
SPT200N65F1A1
Product Custom Attributes
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@200mA
Mfr. Part #:
SPT200N65F1A1
Package:
TO-247P
Product Description
SPT200N65F1A1 Trench IGBT
The SPT200N65F1A1 is a 650V, 200A Trench IGBT designed for high-performance applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and ease of paralleling, making it suitable for demanding motor control scenarios. Its short circuit rating and very low saturation voltage (VCE(SAT) = 1.65V Typ. @ IC = 200A) contribute to efficient operation. Applications include automotive traction modules and general power modules.
Product Attributes
- Brand: SPT
- Model: SPT200N65F1A1
- Revision: 3.1
- Date: 2018.04
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VCE(SAT) | Collector to Emitter Saturation Voltage | IC = 200A, VGE = 15V | - | 1.65 | 1.9 | V |
| VGE(th) | G-E Threshold Voltage | VGE = VCE, IC = 200mA | 4.5 | 5.5 | 6.5 | V |
| ICES | Collector Cut-Off Current | VCE = 650V, VGE = 0V | - | - | 40 | A |
| IGES | G-E Leakage Current | VGE = 20V, VCE = 0V | - | - | ±400 | nA |
| VCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 650 | - | - | V |
| VGES | Gate-to-Emmiter Voltage | - | - | ±20 | V | |
| IC | Collector Current, limited by Tc=100 | - | - | 200 | A | |
| ICM | Pulsed Collector Current, VGE=15V, limited by TJ max | - | - | 600 | A | |
| SCWT | Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V, TJ ≤ 150C | - | - | 5 | s | |
| TJ | Operating Junction Temperature | -40 | - | +175 |
2505231205_SPTECH-SPT200N65F1A1_C5369332.pdf
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