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quality High Gain Gallium Nitride Transistor Wolfspeed CGH09120F Supporting Digital Pre Distortion Correction factory
quality High Gain Gallium Nitride Transistor Wolfspeed CGH09120F Supporting Digital Pre Distortion Correction factory

High Gain Gallium Nitride Transistor Wolfspeed CGH09120F Supporting Digital Pre Distortion Correction

Key Attributes
Model Number: CGH09120F
Product Custom Attributes
Drain To Source Voltage:
120V
Gate Threshold Voltage (Vgs(th)):
3V@28.8mA
Pd - Power Dissipation:
56W
Mfr. Part #:
CGH09120F
Product Description

Product Overview

The MACOM CGH09120F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth applications. It is ideal for amplifier applications in MC-GSM, WCDMA, and LTE systems. The transistor features UHF to 2.5 GHz operation, 21 dB gain, and -38 dBc ACLR at 20 W PAVE, with 35% efficiency at 20 W PAVE. It is supplied in a ceramic/metal flange package and supports a high degree of Digital Pre-Distortion (DPD) correction. Large signal models are available for ADS and MWO.

Product Attributes

  • Brand: MACOM Technology Solutions Inc.
  • Package Type: 440095
  • Material: Gallium Nitride (GaN)
  • Construction: Ceramic/metal flange package

Technical Specifications

Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 120 V 25C
Gate-to-Source Voltage VGS -10, +2 V
Power Dissipation PDISS 56 W
Storage Temperature TSTG -65, +150 C
Operating Junction Temperature TJ 225 C
Maximum Forward Gate Current IGMAX 30 mA 25C
Maximum Drain Current IDMAX 12 A Current limit for long term, reliable operation
Soldering Temperature TS 245 C
Screw Torque 40 in-oz
Thermal Resistance, Junction to Case RJC 1.7 C/W
Case Operating Temperature TC -40, +150 C
Gate Threshold Voltage VGS(th) -3.8, -3.0, -2.3 VDC VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage VGS(Q) -2.7 V VDs = 28, ID = 1.2 A
Saturated Drain Current IDS 23.2, 28.0 A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 84 VDC VGS = -8 V, ID = 28.8 mA
Saturated Output Power PSAT 120 W VDD = 28 V, IDQ = 1.2 A
Pulsed Drain Efficiency 75 % VDD = 28 V, IDQ = 1.2 A, POUT = PSAT
Modulated Gain GSS 20, 21.5 dB VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm
WCDMA Linearity ACLR -38, -34 dBc
Modulated Drain Efficiency 31, 35 %
Output Mismatch Stress VSWR 10 : 1 No damage at all phase angles, VDD = 28 V, IDQ = 1.2 A, POUT = 20 W CW
Input Capacitance CGS 35.3 pF VDS = 28 V, VGS = -8 V, = 1 MHz
Output Capacitance CDS 9.1 pF
Feedback Capacitance CGD 1.6 pF
Frequency Range UHF - 2.5 GHz
Gain 21 dB
ACLR @ 20 W PAVE -38 dBc
Efficiency @ 20 W PAVE 35 %

Electrostatic Discharge (ESD) Classifications:

Parameter Symbol Class Classification Level Test Methodology
Human Body Model HBM 1A ANSI/ESDA/JEDEC JS-001 Table 3
Charge Device Model CDM C3 ANSI/ESDA/JEDEC JS-002 Table 3

Product Ordering Information:

Order Number Description Unit of Measure
CGH09120F GaN HEMT Each
CGH09120F-AMP Test board with GaN HEMT installed Each

2412202123_Wolfspeed-CGH09120F_C20568755.pdf

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