High voltage IGBT SPTECH SPT40N120F1A1 1200V 40A TO247 package suitable for solar inverters and welding
Key Attributes
Model Number:
SPT40N120F1A1
Product Custom Attributes
Td(off):
230ns
Pd - Power Dissipation:
417W
Operating Temperature:
-40℃~+150℃
Td(on):
60ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
4.4nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
270nC@15V
Reverse Recovery Time(trr):
250ns
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
2.9mJ
Mfr. Part #:
SPT40N120F1A1
Package:
TO-247-3
Product Description
Product Overview
The SPT40N120F1A1 is a high-performance IGBT designed for demanding applications. It features a high breakdown voltage of 1200V and utilizes Trench-Stop Technology for enhanced speed, ruggedness, and short-circuit withstand capability. This product is ideal for use in Uninterruptible Power Supplies, solar inverters, welding equipment, and PFC applications.
Product Attributes
- Brand: SPTECH
- Product Package: TO247 Tube
Technical Specifications
| Model | VCE | IC | VCE(SAT) @ IC=40A | Package |
| SPT40N120F1A1 | 1200 V | 40 A | 2.0 V | TO247 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-Emitter Breakdown Voltage | VCES | VGE=0V , IC=250A | 1200 | 1300 | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.1 | 5.8 | 6.4 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=40A, Tj = 25C | - | 2.0 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=40A, Tj = 150C | - | - | 2.5 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 25C | - | - | 10 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 150C | - | - | 2500 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 15 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 4400 | - | pF |
| Output capacitance | Coes | - | 180 | - | pF | |
| Reverse transfer capacitance | Cres | - | 100 | - | pF | |
| Gate charge | QG | VCC = 960V, IC = 40A, VGE = 15V | - | 270 | - | nC |
| Diode Forward Voltage | VFM | IF = 40A | - | 2.6 | - | V |
| Reverse Recovery Time | Trr | IF= 40A, VR = 600V, di/dt= 400A/s | - | 250 | - | ns |
| Reverse Recovery Current | Irr | - | 15 | - | A | |
| Reverse Recovery Charge | Qrr | - | 600 | - | nC |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Turn-on delay time | td(on) | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 60 | - | ns |
| Rise time | tr | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 27 | - | ns |
| Turn-on energy | Eon | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 2.9 | - | mJ |
| Turn-off delay time | td(off) | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 230 | - | ns |
| Fall time | tf | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 70 | - | ns |
| Turn-off energy | Eoff | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C | - | 0.8 | - | mJ |
2411081743_SPTECH-SPT40N120F1A1_C480183.pdf
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