Trench field stop IGBT SPTECH SPT25N120T1 1200V 25A designed for operation in industrial motor drives
Key Attributes
Model Number:
SPT25N120T1
Product Custom Attributes
Td(off):
200ns
Pd - Power Dissipation:
250W
Td(on):
45ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
135nC@15V
Reverse Recovery Time(trr):
180ns
Switching Energy(Eoff):
750uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
SPT25N120T1
Package:
TO-247-3
Product Description
SPT25N120T1 Trench Field Stop IGBT
The SPT25N120T1 is a 1200V, 25A Trench Field Stop IGBT designed for enhanced reliability and performance. It features high ruggedness, stable temperature behavior, a short circuit withstand time of 10s, and low VCE(SAT). Its positive temperature coefficient in VCE(SAT) facilitates easy parallel switching. Applications include frequency converters and motor drives.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| IGBT Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | - | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.2 | 6.0 | 6.8 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=25A, Tj = 25C | - | 1.65 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=25A, Tj = 150C | - | 2.0 | 2.05 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 25C | - | - | 100 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 150C | - | - | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=20A | - | 20 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 2340 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 105 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 60 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 25A, VGE = 15V | - | 135 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC10us, VCC=600V, Tjstart=25C | - | 210 | - | A |
| Turn-on delay time | td(on) | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 45 | - | ns |
| Rise time | tr | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 21 | - | ns |
| Turn-on energy | Eon | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 2.2 | - | mJ |
| Turn-off delay time | td(off) | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 200 | - | ns |
| Fall time | tf | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 93 | - | ns |
| Turn-off energy | Eoff | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=12, Tj = 25C | - | 0.75 | - | mJ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 25A, Tj = 25C | - | 3.0 | - | V |
| Reverse Recovery Time | Trr | IF= 25A, di/dt= 200A/s, Tj = 25C | - | 180 | - | ns |
| Reverse Recovery Current | Irr | IF= 25A, di/dt= 200A/s, Tj = 25C | - | 5 | - | A |
| Reverse Recovery Charge | Qrr | IF= 25A, di/dt= 200A/s, Tj = 25C | - | 270 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | - | 1200 | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | - | 50 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | - | 25 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | - | 50 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | - | 25 | A |
| Continuous Gate-emitter voltage | VGE | - | -20 | - | +20 | V |
| Transient Gate-emitter voltage | VGE | - | -30 | - | +30 | V |
| Turn off safe operating area | - | VCE 1200V, Tj 150C | - | - | -100 | A |
| Pulsed collector current, VGE= 15V, tp limited by Tjmax | ICM | - | - | - | 100 | A |
| Short Circuit Withstand Time, VGE= 15V, VCE 600V | Tsc | - | - | - | 10 | s |
| Power dissipation , Tj=25 | Ptot | - | - | - | 250 | W |
| Operating junction temperature | Tj | - | -40 | - | +150 | C |
| Storage temperature | Ts | - | -55 | - | +150 | C |
| Soldering temperature, wave soldering 1.6mm from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.5 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
2505231205_SPTECH-SPT25N120T1_C480179.pdf
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