Silicon Carbide Half Bridge Module Wolfspeed WAS310M17BM3 1700 Volt 310 Amp High Frequency Operation

Key Attributes
Model Number: WAS310M17BM3
Product Custom Attributes
Mfr. Part #:
WAS310M17BM3
Product Description

Product Overview

The Wolfspeed WAS310M17BM3 is a 1700 V, 310 A Silicon Carbide Half-Bridge Module designed for high-frequency, ultra-low loss operation. It features an industry-standard 62 mm footprint, enabling system retrofits, and offers high humidity operation (THB-80). Key benefits include increased system efficiency due to the low switching and conduction losses of SiC technology, zero reverse recovery from diodes, zero turn-off tail current from MOSFETs, and normally-off, fail-safe device operation. Typical applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.

Product Attributes

  • Brand: Wolfspeed
  • Technology: Silicon Carbide (SiC)
  • Footprint: 62 mm
  • Operation: High Humidity (THB-80)
  • Device Operation: Normally-off, Fail-safe
  • Baseplate Material: Copper
  • Insulator Material: Aluminum Nitride
  • Certifications: RoHS Compliant, REACh Compliant

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions Note
Drain-Source Voltage VDS 1700 V
DC Continuous Drain Current ID 409 A VGS = 15 V, TC = 25 C, TVJ 175 C Notes 2, 3
DC Source-Drain Current (Schottky Diode) ISD(SD) 482 A VGS = -4 V, TC = 25 C, TVJ 175 C
Pulsed Drain-Source Current IDM 620 A VGS = 15 V, TC = 25 C, tPmax limited by TVJmax
Power Dissipation PD 1630 W TC = 25 C, TVJ 175 C Note 4
Virtual Junction Temperature (Operation) TVJ(op) -40 150 C Operation
Virtual Junction Temperature (Intermittent) TVJ 175 C Intermittent with Reduced Life
Drain-Source Breakdown Voltage V(BR)DSS 1700 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 102 mA
Zero Gate Voltage Drain Current IDSS 26.4 2560 A VGS = 0 V, VDS = 1700 V
Gate-Source Leakage Current IGSS 4 1000 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance RDS(on) 4.3 5.8 m VGS = 15 V, ID = 310 A
Transconductance gfs 290 S VDS = 20 V, ID = 310 A
Turn-On Switching Energy EOn 4.4 mJ TVJ = 25 C, VDD = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(OFF) = 1.0 , RG(ON) = 1.0 , L = 13.6 H
Turn-Off Switching Energy EOff 7.2 mJ TVJ = 25 C, VDD = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(OFF) = 1.0 , RG(ON) = 1.0 , L = 13.6 H
Input Capacitance Ciss 31.5 nF VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz
Output Capacitance Coss 1.8 nF
Reverse Transfer Capacitance Crss 45 pF
Total Gate Charge QG 996 nC VDS = 1200 V, VGS = -4 V/15 V, ID = 310 A, Per IEC60747-8-4 pg 21
FET Thermal Resistance, Junction to Case Rth JC 0.092 C/W Fig. 17
Diode Forward Voltage VF 1.78 V VGS = -4 V, IF = 310 A, TVJ = 25 C Fig. 7
Reverse Recovery Time trr 27 ns VGS = -4 V, ISD = 310 A, VR = 900 V, di/dt = 26.5 A/ns, TVJ = 150 C Fig. 32
Reverse Recovery Charge Qrr 4.5 C
Peak Reverse Recovery Current Irrm 281 A
Reverse Recovery Energy Err 3.5 mJ TVJ = 25 C, VDS = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(ext) = 1.0 , L = 13.6 H Note 5
Diode Thermal Resistance, Junction to Case Rth JC 0.086 C/W Fig. 18
Package Resistance, M1 (High-Side) R3-1 1.31 m TC = 25 C, ISD = 310 A Note 6
Package Resistance, M2 (Low-Side) R1-2 1.26 m TC = 25 C, ISD = 310 A Note 6
Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 4 5 5.5 N-m Baseplate, M6-1.0 Bolts; Power Terminals, M6-1.0 Bolts
Weight W 300 g
Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 minute
Clearance Distance (Terminal to Terminal) 9 mm
Clearance Distance (Terminal to Baseplate) 30 mm
Creepage Distance (Terminal to Terminal) 30 mm
Creepage Distance (Terminal to Baseplate) 40 mm

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