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quality 1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation factory
quality 1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation factory
quality 1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation factory
quality 1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation factory

1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation

Key Attributes
Model Number: WAS175M12BM3
Product Custom Attributes
Mfr. Part #:
WAS175M12BM3
Product Description

Product Overview

The Wolfspeed WAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from the MOSFET, offering normally-off, fail-safe device operation. The module boasts an industry-standard 62mm footprint, facilitating system retrofits and enabling increased system efficiency due to the low switching and conduction losses of SiC. It is suitable for demanding applications such as induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.

Product Attributes

  • Brand: Wolfspeed
  • Technology: Silicon Carbide (SiC)
  • Footprint: Industry Standard 62mm
  • Device Operation: Normally-off, Fail-safe
  • Construction: Copper Baseplate and Aluminum Nitride Insulator
  • High Humidity Operation: THB-80 (HV-H3TRB)
  • Certifications: RoHS Compliant, REACh Compliant

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Conditions / Notes
Module Ratings
Drain-Source Voltage VDS 1200 V
Drain Current IDS 175 A VGS = 15 V, TC = 90 C, TVJ 175 C
DC Source-Drain Current (Diode) ISD 169 A VGS = -4 V, TC = 90 C, TVJ 175 C
Virtual Junction Temperature TVJ op -40 150 C Operation
Virtual Junction Temperature TVJ op 175 C Intermittent with Reduced Life
MOSFET Characteristics (Per Position)
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 43 mA
Gate Threshold Voltage VGS(th) 2.0 V VDS = VGS, ID = 43 mA, TVJ = 175 C
Drain-Source On-State Resistance RDS(on) 8.0 10.4 m VGS = 15 V, ID = 175 A
Drain-Source On-State Resistance RDS(on) 12.9 m VGS = 15 V, ID = 175 A, TVJ = 150 C
Turn-On Switching Energy EOn 2.4 2.7 mJ TVJ = 25 C to 150 C
Turn-Off Switching Energy EOff 1.9 2.0 mJ TVJ = 25 C to 150 C
Input Capacitance Ciss 12.9 nF VGS = 0 V, VDS = 800 V, f = 100 kHz
FET Thermal Resistance, Junction to Case Rth JC 0.190 C/W
Diode Characteristics (Per Position)
Diode Forward Voltage VF 1.8 V VGS = -4 V, IF = 175 A, TVJ = 25 C
Diode Forward Voltage VF 2.3 V VGS = -4 V, IF = 175 A, TVJ = 150 C
Reverse Recovery Time trr 20.8 ns TVJ = 150 C
Reverse Recovery Charge Qrr 1.8 C
Diode Thermal Resistance, JCT. to Case Rth JC 0.216 C/W
Module Physical Characteristics
Package Resistance, M1 (High-Side) R3-1 2.30 3.22 m TC = 25 C to 125 C
Package Resistance, M2 (Low-Side) R1-2 2.12 2.97 m TC = 25 C to 125 C
Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 4 5 5.5 N-m Baseplate & Power Terminals
Weight W 300 g
Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 minute
Clearance Distance 9 30 mm Terminal to Terminal / Baseplate
Creepage Distance 30 40 mm Terminal to Terminal / Baseplate

2506271445_Wolfspeed-WAS175M12BM3_C20544053.pdf

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