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quality Low gate charge P channel MOSFET XCH BSS84 ideal for power management and synchronous buck circuits factory
quality Low gate charge P channel MOSFET XCH BSS84 ideal for power management and synchronous buck circuits factory

Low gate charge P channel MOSFET XCH BSS84 ideal for power management and synchronous buck circuits

Key Attributes
Model Number: BSS84
Product Custom Attributes
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview

The BSS84 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes
  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: RoHS, Green Product
Technical Specifications
SymbolParameterConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
VDSDrain-Source Voltage-50V
VGSGate-Source Voltage20V
ID@TA=25CContinuous Drain Current, VGS @ -4.5V1-0.17A
ID@TA=70CContinuous Drain Current, VGS @ -4.5V1-0.14A
IDMPulsed Drain Current2-1.2A
PD@TA=25CTotal Power Dissipation30.35W
TSTGStorage Temperature Range-55150C
TJOperating Junction Temperature Range-55150C
Thermal Data
RJAThermal Resistance Junction-Ambient1357C/ W
Electrical Characteristics
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=-250uA-50V
RDS(ON)Static Drain-Source On-Resistance2VGS=-10V , ID=-0.15A3.38
RDS(ON)Static Drain-Source On-Resistance2VGS=-4.5V , ID=-0.15A3.59.9
VGS(th)Gate Threshold VoltageVGS=VDS , ID =-250uA-0.9-1.4-2.0V
IDSSDrain-Source Leakage CurrentVDS=-50V , VGS=0V , TJ=25C-1uA
IGSSGate-Source Leakage CurrentVGS= 20V , VDS=0V100nA
QgTotal Gate Charge (-4.5V)VDS=-30V , VGS=-10V , ID=-0.15A1.77nC
QgsGate-Source Charge0.57
QgdGate-Drain Charge0.18
Td(on)Turn-On Delay TimeVDD=-30V , VGS=-4.5V , RG=2.5 , ID=-0.15A8.6ns
TrRise Time20
Td(off)Turn-Off Delay Time15
TfFall Time77
CissInput CapacitanceVDS=-30V , VGS=0V , f=1MHz43pF
CossOutput Capacitance2.9
CrssReverse Transfer Capacitance1.8
Diode Characteristics
ISContinuous Source Current1,4VG=VD=0V , Force Current-0.17A
VSDDiode Forward Voltage2VGS=0V , IS=-0.17A , TJ=25C-1.2V
trrReverse Recovery TimeIF=-0.15A , di/dt=100A/ s , TJ=25C23nS
QrrReverse Recovery Charge13nC

2512121540_XCH-BSS84_C53155322.pdf
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