Small power switching MOSFET XCH 2N7002K featuring trench technology and low RDSon for performance
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.9Ω@10V,0.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
4pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
28pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to advanced high cell density Trench technology.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Part Number | BVDSS (V) | RDS(on) () | ID (A) | Package |
| FKN0008 / 2N7002K | 60 | 1.9 | 0.3 | SOT23 |
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current (TA= 25) | 0.3 | A | |||
| ID | Continuous Drain Current (TA= 100) | 0.2 | A | |||
| IDM | Pulsed Drain Current (note1) | 1.2 | A | |||
| PD | Power Dissipation (TA= 25) | 0.35 | W | |||
| RJA | Thermal Resistance, Junction to Ambient | 357 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= 250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =60V, VGS = 0V | - | - | 1 | A |
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = 20V | - | - | 10 | uA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= 250A | 1 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance (note2) | VGS =10V, ID =0.3A | - | 1.9 | 2.2 | |
| RDS(on) | Static Drain-Source on-Resistance (note2) | VGS =4.5V, ID =0.2A | - | 2.05 | 2.87 | |
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 28 | - | pF |
| Coss | Output Capacitance | - | 11 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Qg | Total Gate Charge | VDS = 10V, ID = 0.3A, VGS = 4.5V | - | 1.7 | - | nC |
| Qgs | Gate-Source Charge | - | 0.3 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.6 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD = 10V, ID =0.2A, RGEN = 10,VGS=10V | - | 2 | - | ns |
| tr | Turn-on Rise Time | - | 15 | - | ns | |
| td(off) | Turn-off Delay Time | - | 7 | - | ns | |
| tf | Turn-off Fall Time | - | 20 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 0.3 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 1.2 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS =0.3A | - | - | 1.2 | V |
2302061809_XCH-2N7002K_C5354006.pdf
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