NPN Transistor Suzhou Good-Ark Elec GSBCP68-16 with High Collector Current and Low Saturation Voltage

Key Attributes
Model Number: GSBCP68-16
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
40MHz
Type:
NPN
Vce Saturation(VCE(sat)):
500mV@1A,100mA
Pd - Power Dissipation:
1W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
20V
Mfr. Part #:
GSBCP68-16
Package:
SOT-223
Product Description

Product Overview

The GSBCP68 is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary type is the GSBCP69 (PNP).

Product Attributes

  • Brand: Goodarksemi (implied by URL)
  • Package: SOT-223
  • Complementary Type: GSBCP69 (PNP)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=100A, IE=032V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=1mA, IB=020V
Emitter-Base Breakdown VoltageV(BR)EBOIE=100A, IC=05V
Collector Cut-Off CurrentICBOVCB=25V, IE=00.1A
Emitter Cut-Off CurrentIEBOVEB=5V, IC=00.1A
DC Current GainhFE(1)VCE=1V, IC=500mA85375
hFE(2)VCE=1V, IC=1A60
hFE(3)VCE=10V, IC=5mA50
Collector-Emitter Saturation VoltageVCE(sat)IC=1A, IB=100mA0.5V
Base-Emitter VoltageVBE1VCE=10V, IC=5mA0.68V
Base-Emitter VoltageVBE2VCE=1V, IC=1A1V
Transition FrequencyfTVCE=5V, IC=10mA, f=100MHz40MHz
Collector Output CapacitanceCobVCB=5V, IE=0, f=1MHz38pF
RankMinMaxUnit
GSBCP68-1085160
GSBCP68-16100250
GSBCP68-25160375
ParameterSymbolValueUnit
Collector Current ContinuousIC1A
Collector Power DissipationPC1W
Thermal Resistance Junction to AmbientRJA94/W
Storage Temperature RangeTSTG-65 to +150
SymbolDimensions In MillimetersDimensions In Inches
2.300 (BSC)0.091 (BSC)

2411201841_Suzhou-Good-Ark-Elec-GSBCP68-16_C19841094.pdf

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