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quality Multi EPI Super Junction Power MOSFET XCH GSW77N65EF with robust avalanche and dv dt characteristics factory
quality Multi EPI Super Junction Power MOSFET XCH GSW77N65EF with robust avalanche and dv dt characteristics factory

Multi EPI Super Junction Power MOSFET XCH GSW77N65EF with robust avalanche and dv dt characteristics

Key Attributes
Model Number: GSW77N65EF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
77A
Operating Temperature -:
-40℃~+125℃
RDS(on):
35mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
6.2nF@25V
Pd - Power Dissipation:
400W
Gate Charge(Qg):
300nC@10V
Mfr. Part #:
GSW77N65EF
Package:
TO-247
Product Description

Product Overview

The GSW77N65EF is a low-voltage N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features revolutionary high-voltage technology, offering superior RDS(on) in a TO-247 package, ultra-low gate charge, and excellent avalanche and dv/dt characteristics. This advanced MOSFET is designed for high-performance applications requiring fast switching times, low on-resistance, and robust avalanche capabilities.

Product Attributes

  • Brand: XCH Semiconductor
  • Package: TO-247, Pb-Free
  • Industrial Range: -40C to +125C
  • Certifications: Pb-free lead planting

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
BVDSSDrain-Source Breakdown VoltageVGS = 0V, ID = 250A, TJ = 25650--V
VGS = 0V, ID = 250A, TJ = 150-700-V
BVDSS/TJBreakdown Voltage Temperature CoefficientID = 250A, Referenced to 25-0.6-V/
IDSSZero Gate Voltage Drain CurrentVDS = 650V, VGS = 0V, TJ = 25--10A
VDS = 650V, VGS = 0V, TJ = 150--1A
IGSSFGate-Body Leakage Current, ForwardVGS = 30V, VDS = 0V--100nA
IGSSRGate-Body Leakage Current, ReverseVGS = -30V, VDS = 0V---100nA
VGS(th)Gate Threshold VoltageVDS = VGS, ID = 250A2.5-4.5V
RDS(on)Static Drain-Source On-ResistanceVGS = 10V, ID = 35A-3541m
gFSForward TransconductanceVDS = 40V, ID = 35A-30-S
CissInput CapacitanceVDS = 25V, VGS = 0V, f = 1.0MHz-6200-pF
CossOutput Capacitance--300-pF
CrssReverse Transfer Capacitance--12-pF
td(on)Turn-On Delay TimeVDD = 520V, ID = 35A, RG = 20 (Note 4)-39-ns
trTurn-On Rise Time--20-ns
td(off)Turn-Off Delay Time--100-ns
tfTurn-Off Fall Time--5-ns
QgTotal Gate ChargeVDS = 520V, ID = 35A, VGS = 10V (Note 4)-300-nC
QgsGate-Source Charge--59-nC
QgdGate-Drain Charge--195-nC
ISMaximum Continuous Drain-Source Diode Forward Current---77A
ISMMaximum Pulsed Drain-Source Diode Forward Current---260A
VSDDrain-Source Diode Forward VoltageVGS = 0V, IS = 35A-0.91.5V
VGS = 0V, IS = 77A--1.5V
trrReverse Recovery TimeVGS = 0V, IS = 35A, dIF/dt =100A/s-290-ns
QrrReverse Recovery Charge--12-C
RJCThermal Resistance, Junction-to-CaseTj = 25, unless otherwise specified.-0.32-/W
RCSThermal Resistance, Case-to-SinkTyp.-0.5-/W
RJAThermal Resistance, Junction-to-Ambient--62-/W
PDPower DissipationTC = 25--400W
TJ, TSTGOperating and Storage Temperature Range--55-+150
TLMaximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds---300

Applications

  • Consumer
  • EV Charger
  • PFC stages for server & telecom
  • SMPS
  • UPS
  • Solar
  • Lighting

2304250924_XCH-GSW77N65EF_C5455785.pdf

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