silicon NPN transistor TOSHIBA 2SC5712 TE12L F ideal for in DC DC converters and fast switching circuits
Key Attributes
Model Number:
2SC5712(TE12L,F)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@0.3A,2V
Type:
NPN
Vce Saturation(VCE(sat)):
140mV
Pd - Power Dissipation:
1W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5712(TE12L,F)
Package:
SOT-89
Product Description
Product Overview
The TOSHIBA 2SC5712 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for use in DC-DC converters and DC-AC converters. Key features include high DC current gain, low collector-emitter saturation voltage, and fast switching speeds.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by brand and datasheet format)
- Material: Silicon
- Certifications: RoHS Compatible (indicated by [[G]]/RoHS symbol)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 100 | V | |||
| Collector-emitter voltage | VCEX | 80 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 7 | V | |||
| Collector current | IC (DC) | 3.0 | A | |||
| Collector current | ICP (Pulse) | 5.0 | A | |||
| Base current | IB (DC) | 0.3 | A | |||
| Collector power dissipation | PC (DC) | t = 10 s | 2.5 | W | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | 55 | 150 | C | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB = 100 V, IE = 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 7 V, IC = 0 | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.3 A | 400 | 1000 | ||
| DC current gain | hFE (2) | VCE = 2 V, IC = 1 A | 200 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = 1 A, IB = 20 mA | 0.14 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = 1 A, IB = 20 mA | 1.10 | V | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 13 | pF | ||
| Rise time | tr | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 40 | ns | ||
| Storage time | tstg | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 500 | ns | ||
| Fall time | tf | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 120 | ns | ||
2410121917_TOSHIBA-2SC5712-TE12L-F_C5222993.pdf
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