High current 64A 30V N Channel MOSFET Suzhou Good Ark Elec SSFN3964 for power supply applications
Key Attributes
Model Number:
SSFN3964
Product Custom Attributes
Current - Continuous Drain(Id):
64A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
460pF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
44.6W
Output Capacitance(Coss):
600pF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SSFN3964
Product Description
Product Overview
The SSFN3964 is a 30V N-Channel MOSFET designed for high efficiency applications. It utilizes advanced MOSFET process technology and a high cell density design to achieve low on-resistance and low gate charge, making it ideal for switched-mode power supplies and other power conversion systems. Key benefits include fast switching and reverse body recovery, contributing to overall system efficiency and reliability.
Product Attributes
- Brand: goodarksemi
- Model: SSFN3964
- Technology: Advanced MOSFET process
- Package Type: PPAK3X3
Technical Specifications
| Main Product Characteristics | |||
| Parameter | Value | Unit | Notes |
| Drain-Source Voltage | 30 | V | V(BR)DSS |
| On-Resistance | 4.5 | m | RDS(ON) |
| Continuous Drain Current (TC=25C) | 64 | A | ID |
| Continuous Drain Current (TC=100C) | 40 | A | ID |
| Pulsed Drain Current | 256 | A | IDM |
| Single Pulse Avalanche Energy | 115 | mJ | EAS |
| Single Pulse Avalanche Current | 48 | A | IAS |
| Power Dissipation (TC=25C) | 48 | W | PD |
| Power Dissipation Derate above 25C | 0.36 | W/C | PD |
| Storage Temperature Range | -50 to +150 | C | TSTG |
| Operating Junction Temperature Range | -50 to +150 | C | TJ |
| Thermal Characteristics | ||||
| Parameter | Symbol | Typ. | Max. | Unit |
| Thermal Resistance Junction to Ambient | RJA | --- | 62 | C/W |
| Thermal Resistance Junction to Case | RJC | --- | 2.8 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | --- | --- | V |
| BVDSS Temperature Coefficient | BVDSS/ TJ | Reference to 25C, ID=1mA | --- | 0.03 | --- | V/C |
| Drain-Source Leakage Current | IDSS | VDS=30V, VGS=0V, TJ=25C | --- | --- | 1 | uA |
| VDS=24V, VGS=0V, TJ=125C | --- | --- | 10 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | --- | --- | 100 | nA |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=15A | --- | 3.6 | 4.5 | m |
| VGS=4.5V, ID=10A | --- | 4.9 | 6.4 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | --- | -4.17 | --- | mV/C | |
| Forward Transconductance | gfs | VDS=10V, ID=3A | --- | 10 | --- | S |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=15A | --- | 34.6 | 70 | nC |
| Gate-Source Charge | Qgs | --- | 5.5 | 11 | nC | |
| Gate-Drain Charge | Qgd | --- | 6.8 | 13 | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V, RG=3.3, ID=1A | --- | 9.7 | 20 | nS |
| Rise Time | Tr | --- | 15.8 | 31 | nS | |
| Turn-Off Delay Time | Td(off) | --- | 37.4 | 75 | nS | |
| Fall Time | Tf | --- | 12 | 24 | nS | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, F=1MHz | --- | 1910 | 3800 | pF |
| Output Capacitance | Coss | --- | 300 | 600 | pF | |
| Reverse Transfer Capacitance | Crss | --- | 230 | 460 | pF | |
| Gate Resistance | Rg | VGS=0V, VDS=0V, F=1MHz | --- | 1.14 | --- | |
| Continuous Source Current | IS | --- | --- | 64 | A | |
| Pulsed Source Current | ISM | --- | --- | 128 | A | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25C | --- | --- | 1 | V |
| Package Outline Dimensions | |||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Notes | ||
| Min | Max | Min | Max | ||
| A | 0.700 | 0.800 | 0.028 | 0.031 | |
| b | 0.250 | 0.350 | 0.010 | 0.013 | |
| c | 0.100 | 0.250 | 0.004 | 0.009 | |
| D | 3.250 | 3.450 | 0.128 | 0.135 | |
| D1 | 3.000 | 3.200 | 0.119 | 0.125 | |
| D2 | 1.780 | 1.980 | 0.070 | 0.077 | |
| D3 | 0.130 REF | 0.130 REF | 0.005 REF | 0.005 REF | |
| E | 3.200 | 3.400 | 0.126 | 0.133 | |
| E1 | 3.000 | 3.200 | 0.119 | 0.125 | |
| E2 | 2.390 | 2.590 | 0.094 | 0.102 | |
| e | 0.650 BSC | 0.650 BSC | 0.026 BSC | 0.026 BSC | |
| H | 0.300 | 0.500 | 0.011 | 0.019 | |
| L | 0.300 | 0.500 | 0.011 | 0.019 | |
| L1 | 0.130 REF | 0.130 REF | 0.005 REF | 0.005 REF | |
| 0 | 12 | 0 | 12 | ||
| M | 0.150 REF | 0.150 REF | 0.006 REF | 0.006 REF | |
2411201842_Suzhou-Good-Ark-Elec-SSFN3964_C19841899.pdf
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