power management using XYD X4N65DHE2 N channel MOSFET suitable for standby power systems and chargers
Key Attributes
Model Number:
X4N65DHE2
Product Custom Attributes
Mfr. Part #:
X4N65DHE2
Package:
TO-252-2L
Product Description
Product Overview
The X4N65DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Model: X4N65DHE2
- Package: TO-252-2L
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 650 | V | - |
| Gate-Source Voltage | VGS | -30 to 30 | V | - |
| Continuous Drain Current | ID | 4 | A | TC=25, Note 1 |
| Pulsed Drain Current | IDM | 12 | A | Note 2 |
| Single Pulse Avalanche Energy | EAS | 180 | mJ | L=10mH,VD=50V, TC=25 |
| Maximum Power Dissipation | PD | 74 | W | TC=25 |
| Maximum Power Dissipation | PD | 2.3 | W | TA=25 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 to 150 | - | |
| Thermal Characteristics | ||||
| Thermal resistance, Junction to Case | Rth(J-c) | 1.69 | /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | 54 | - | - |
| Electrical Characteristics (Tj=25,unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=650V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=30V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-30V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 2 to 4 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | 2.9 | VGS=10V,ID=2A, Max | |
| Drain-Source On-State Resistance | RDS(on) | 2.4 | VGS=10V,ID=2A, Typ | |
| Gate Resistance | Rg | 3.9 | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | 3 | S | VDS=10V,ID=2A, Typ |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 587 | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | 48 | pF | - |
| Reverse Transfer Capacitance | Crss | 3 | pF | - |
| Turn-On Delay Time | td(on) | 6 | ns | VDS=325V,RG=10,ID=4A,VGS=10V |
| Turn-On Rise Time | tr | 11 | ns | - |
| Turn-Off Delay Time | td(off) | 14 | ns | - |
| Turn-Off Fall Time | tf | 41 | ns | - |
| Gate Charge Characteristics | ||||
| Total Gate Charge | Qg | 16 | nC | VDS=520V,ID=4A,VGS=10V |
| Gate-Source Charge | Qgs | 4 | nC | - |
| Gate-Drain Charge | Qgd | 3 | nC | - |
| Reverse Diode Characteristics | ||||
| Continuous Diode Forward Current | IS | 4 | A | - |
| Pulsed Diode Forward Current | ISM | 12 | A | - |
| Diode Forward Voltage | VSD | 1.2 | V | IS=4A,VGS=0V |
| Reverse Recovery Time | trr | 375 | ns | VDS=30V,VGS=0V,IS=1A di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 533 | nC | - |
2509251450_XYD-X4N65DHE2_C51952971.pdf
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