High current N channel mosfet XYD X2N030TLE2 designed for AC DC quick charger and battery systems
Key Attributes
Model Number:
X2N030TLE2
Product Custom Attributes
Mfr. Part #:
X2N030TLE2
Package:
TO-252-2L
Product Description
X2N030TLE2 N-CHANNEL MOSFET
The X2N030TLE2 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X2N030TLE2
- Channel Type: N-CHANNEL
- Package: TO-252-2L
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | 30 | V | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current (Note 1) | ID | - | - | 250 | A | TC=25 |
| Continuous Drain Current (Note 1) | ID | - | - | 162 | A | TC=100 |
| Pulsed Drain Current (Note 2) | IDM | - | - | 1000 | A | - |
| Single Pulse Avalanche Energy | EAS | - | - | 689 | mJ | L=0.5mH,VD=24V, TC=25 |
| Maximum Power Dissipation | PD | - | - | 201 | W | TC=25 |
| Maximum Power Dissipation | PD | - | - | 2.8 | W | TA=25 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -50 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | - | 0.62 | - | /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | 44 | - | - | - |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS=30V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | - | - | 100 | nA | VGS=20V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | - | - | -100 | nA | VGS=-20V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 1.0 | - | 2.4 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 1.7 | 2 | m | VGS=10V,ID=20A |
| Drain-Source On-State Resistance | RDS(on) | - | 2.5 | 3.3 | m | VGS=4.5V,ID=15A |
| Gate Resistance | Rg | - | 1 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 23 | - | S | VDS=10V,ID=20A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | - | 7500 | - | pF | VDS=15V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | - | 841 | - | pF | - |
| Reverse Transfer Capacitance | Crss | - | 800 | - | pF | - |
| Turn-On Delay Time | td(on) | - | 23 | - | ns | VDD=20V, VGS=10V, RG=3, ID=30A |
| Turn-On Rise Time | tr | - | 68 | - | ns | - |
| Turn-Off Delay Time | td(off) | - | 133 | - | ns | - |
| Turn-Off Fall Time | tf | - | 80 | - | ns | - |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | - | 133 | - | nC | VDS=20V , VGS=10V , ID=30A |
| Gate-Source Charge | Qgs | - | 28 | - | nC | - |
| Gate-Drain Charge | Qgd | - | 27 | - | nC | - |
| Reverse Diode | ||||||
| Continuous Diode Forward Current | IS | - | - | 250 | A | - |
| Pulsed Diode Forward Current | ISM | - | - | 1000 | A | - |
| Diode Forward Voltage | VSD | - | - | 1.2 | V | IS=20A,VGS=0V |
| Reverse Recovery Time | trr | - | 29 | - | ns | VGS=0V, IS=30A ,di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 20 | - | nC | - |
2509251450_XYD-X2N030TLE2_C51952878.pdf
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