Switching AF Amplifier Transistor Taiwan Semiconductor BC337-16 B1G TO 92 Package Halogen Free Green Compound

Key Attributes
Model Number: BC337-16 B1G
Product Custom Attributes
Mfr. Part #:
BC337-16 B1G
Product Description

Product Overview

The BC337 and BC338 series are NPN transistors designed for switching and AF amplifier applications. These transistors are available in TO-92 small outline plastic packages and feature green compound (halogen-free) construction. They offer moisture sensitivity level 1, are Pb-free and RoHS compliant, and are suitable for high-temperature soldering.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Origin: Taiwan Semiconductor (implied by brand)
  • Material: Green compound (Halogen free)
  • Color: Green (implied by Green compound)
  • Certifications: Pb free and RoHS compliant
  • Moisture Sensitivity: Level 1

Technical Specifications

Part NumberVCBO (V)VCEO (V)VEBO (V)IC (mA)PTOT (mW)VCE(sat) (V)hFEfT (MHz)Cob (pF)
BC337-16/25/40 thru BC338-16/25/405045562510000.7 (VCE=5V, IC=300mA)16, 25, 40 (Groups)100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC337-165045562510000.7 (VCE=5V, IC=300mA)16100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC337-255045562510000.7 (VCE=5V, IC=300mA)25100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC337-405045562510000.7 (VCE=5V, IC=300mA)40100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC338-163045562510000.7 (VCE=5V, IC=300mA)16100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC338-253045562510000.7 (VCE=5V, IC=300mA)25100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)
BC338-403045562510000.7 (VCE=5V, IC=300mA)40100 (VCE=5V, IC=10mA, f=50MHz)25 (VCE=10V, f=1MHz)

Maximum Ratings

ParameterSymbolBC337BC338Unit
Collector-Base VoltageVCBO5030V
Collector-Emitter VoltageVCEO4545V
Emitter-Base VoltageVEBO55V
Peak Collector CurrentICM625625mA
Collector CurrentIC10001000mA
Total Power DissipationPTOT10001000mW
Junction and Storage Temperature RangeTJ , TSTG-55 to +150-55 to +150C

Electrical Characteristics (TA=25 unless otherwise noted)

ParameterSymbolConditionBC337BC338Unit
Collector-Base Breakdown VoltageV(BR)CBOIC= 100A5030V
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 2mA4545V
Emitter-Base Breakdown VoltageV(BR)EBOIE= 100A55V
Collector Cutoff CurrentICBOVCB=50V100100nA
Collector Cutoff CurrentICBOVCB=30V250250nA
Collector-Emitter Saturation VoltageVCE(sat)IC=500mA, IB=50mA1.21.2V
Base Emitter On VoltageVBE(on)VCE= 5V, IC= 300mA1.21.2V
Transition FrequencyfTVCE= 5V, IC= 10mA, f=50MHz100100MHz
Output CapacitanceCobVCB=10V, f=1MHz2525pF

Mechanical Data

DimensionTO-92 Bulk (mm)TO-92 Bulk (inch)TO-92 Ammo (mm)TO-92 Ammo (inch)
A4.30 - 5.100.169 - 0.2014.30 - 5.100.169 - 0.201
B4.30 - 4.700.169 - 0.1854.30 - 4.700.169 - 0.185
C12.50 - 14.500.492 - -12.50 - -0.492 - -
D1.17 - 1.370.046 - 0.0542.20 - 2.800.087 - 0.110
E0.35 - 0.550.014 - 0.0220.35 - 0.550.014 - 0.022
F1.17 - 1.370.046 - 0.0540.59 - 1.400.023 - 0.055
G0.59 - 1.400.023 - 0.0550.29 - 0.510.011 - 0.020
H0.29 - 0.510.011 - 0.0203.30 - 4.100.130 - 0.161
I3.30 - 4.100.130 - 0.161--

2504101957_Taiwan-Semiconductor-BC337-16-B1G_C20999594.pdf

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