High current capability XYD X345P15THI8 P channel MOSFET suitable for power management systems
Product Overview
The X345P15THI8 is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is ideal for high-frequency switching and synchronous rectification applications, including DC/DC converters. This lead-free product is designed for efficient power management.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: Xiamen
- Material: MOSFET
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Values Unit | Note/Test Conditions |
| Drain-Source Voltage | VDSS | -150 V | - |
| Gate-Source Voltage | VGS | -20 to 20 V | - |
| Continuous Drain Current | ID | -2.2 A (TA=25) -1.4 A (TA=100) | Note 1 |
| Pulsed Drain Current | IDM | -8.8 A | Note 2 |
| Single Pulse Avalanche Energy | EAS | 72.3 mJ | L=0.5mH,VD=-50V, TC=25 |
| Maximum Power Dissipation | PD | 3.6 W (TA=25) 1.4 W (TA=100) | - |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 to 150 | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | 34.8 /W | - |
| Drain-Source Breakdown Voltage | BVDSS | -150 V | VGS=0V,ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 A | VDS=-150V,VGS=0V |
| Gate-Body Leakage Current, Forward | IGSSF | 100 nA | VGS=20V,VDS=0V |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 nA | VGS=-20V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | -2 to -4 V | VDS=VGS,ID=-250A |
| Drain-Source On-State Resistance | RDS(on) | 265 to 345 m | VGS=-10V,ID=-2A |
| Gate Resistance | Rg | 5.2 | VGS=0V, VDS=0V, f=1MHz |
| Forward Transconductance | gfs | 10 S | VDS=-5V,ID=-2A |
| Input Capacitance | Ciss | 2069 pF | VDS=-50V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | 44.3 pF | - |
| Reverse Transfer Capacitance | Crss | 37.1 pF | - |
| Turn-On Delay Time | td(on) | 30 ns | VDD=-50V,RG=3,VGS=-10V,RL=25 |
| Turn-On Rise Time | tr | 34 ns | - |
| Turn-Off Delay Time | td(off) | 241 ns | - |
| Turn-Off Fall Time | tf | 131 ns | - |
| Total Gate Charge | Qg | 38.6 nC | VDS=-50V,ID=-2A,VGS=-10V |
| Gate-Source Charge | Qgs | 8.1 nC | - |
| Gate-Drain Charge | Qg d | 9.4 nC | - |
| Continuous Diode Forward Current | ISD | -2.2 A | - |
| Diode Forward Voltage | VSD | -1.2 V | IS=-2A,VGS=0V |
| Reverse Recovery Time | trr | 34 ns | VGS=0V,IS=-2A,di/dt=-100A/s |
| Reverse Recovery Charge | Qrr | 32.3 nC | - |
2509251450_XYD-X345P15THI8_C51952763.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.