High current capability XYD X345P15THI8 P channel MOSFET suitable for power management systems

Key Attributes
Model Number: X345P15THI8
Product Custom Attributes
Mfr. Part #:
X345P15THI8
Package:
SOP-8L
Product Description

Product Overview

The X345P15THI8 is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is ideal for high-frequency switching and synchronous rectification applications, including DC/DC converters. This lead-free product is designed for efficient power management.

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Origin: Xiamen
  • Material: MOSFET
  • Certifications: Lead free product is acquired

Technical Specifications

ParameterSymbolValues UnitNote/Test Conditions
Drain-Source VoltageVDSS-150 V-
Gate-Source VoltageVGS-20 to 20 V-
Continuous Drain CurrentID-2.2 A (TA=25)
-1.4 A (TA=100)
Note 1
Pulsed Drain CurrentIDM-8.8 ANote 2
Single Pulse Avalanche EnergyEAS72.3 mJL=0.5mH,VD=-50V, TC=25
Maximum Power DissipationPD3.6 W (TA=25)
1.4 W (TA=100)
-
Operating Junction and Storage Temperature RangeTj,TSTG-55 to 150 -
Thermal resistance, Junction to AmbientRth(J-a)34.8 /W-
Drain-Source Breakdown VoltageBVDSS-150 VVGS=0V,ID=-250A
Zero Gate Voltage Drain CurrentIDSS-1 AVDS=-150V,VGS=0V
Gate-Body Leakage Current, ForwardIGSSF100 nAVGS=20V,VDS=0V
Gate-Body Leakage Current, ReverseIGSSR-100 nAVGS=-20V,VDS=0V
Gate-Source Threshold VoltageVGS(th)-2 to -4 VVDS=VGS,ID=-250A
Drain-Source On-State ResistanceRDS(on)265 to 345 mVGS=-10V,ID=-2A
Gate ResistanceRg5.2 VGS=0V, VDS=0V, f=1MHz
Forward Transconductancegfs10 SVDS=-5V,ID=-2A
Input CapacitanceCiss2069 pFVDS=-50V,VGS=0V,f=1.0MHZ
Output CapacitanceCoss44.3 pF-
Reverse Transfer CapacitanceCrss37.1 pF-
Turn-On Delay Timetd(on)30 nsVDD=-50V,RG=3,VGS=-10V,RL=25
Turn-On Rise Timetr34 ns-
Turn-Off Delay Timetd(off)241 ns-
Turn-Off Fall Timetf131 ns-
Total Gate ChargeQg38.6 nCVDS=-50V,ID=-2A,VGS=-10V
Gate-Source ChargeQgs8.1 nC-
Gate-Drain ChargeQg d9.4 nC-
Continuous Diode Forward CurrentISD-2.2 A-
Diode Forward VoltageVSD-1.2 VIS=-2A,VGS=0V
Reverse Recovery Timetrr34 nsVGS=0V,IS=-2A,di/dt=-100A/s
Reverse Recovery ChargeQrr32.3 nC-

2509251450_XYD-X345P15THI8_C51952763.pdf

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