General Purpose PNP Transistor XZT S9012 with High Collector Current and Linear hFE Characteristics
Key Attributes
Model Number:
S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@50mA,1V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9012
Package:
SOT-23
Product Description
S9012 PNP Transistor
The S9012 is a PNP transistor in a SOT-23 package. It features high collector current, excellent hFE linearity, and is complementary to the S9013. This transistor is suitable for general-purpose applications.
Product Attributes
- Brand: XT ELECTRONICS
- Package: SOT-23
- Type: TRANSISTOR (PNP)
- Complementary To: S9013
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 416 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-0.1mA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-0.1mA, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -0.1 | uA | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -0.1 | uA | ||
| DC current gain | hFE | VCE=-1V, IC=-50mA | 120 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB=-50mA | -1.2 | V | ||
| Transition frequency | fT | VCE=-6V,IC=-20mA, f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 5 | pF | ||
hFE Classification
| RANK | RANGE |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | 0.950 TYP | 0.037 TYP |
| L | 0.300 - 0.500 | 0.012 - 0.020 |
| L1 | 0.550 REF | 0.022 REF |
| 0 - 8 | 0 - 8 |
2409301212_XZT-S9012_C5805827.pdf
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