trench power mosfet VBsemi Elec SI4599DY-T1-GE3-VB 60 volt n channel and p channel with low on resistance
Key Attributes
Model Number:
SI4599DY-T1-GE3-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V;55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@15V
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
75pF;95pF
Input Capacitance(Ciss):
665pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
6nC@4.5V;8nC@4.5V
Mfr. Part #:
SI4599DY-T1-GE3-VB
Package:
SO-8
Product Description
Product Overview
The SI4599DY-T1-GE3-VB is a 60-V N- and P-Channel Trench Power MOSFET designed for various applications. It features low on-resistance, high performance, and is 100% Rg and UIS tested. Available in a SO-8 package, it is also halogen-free.
Product Attributes
- Brand: Vishay (VBsemi)
- Certifications: Halogen-free According to IEC 61249-2-21 Available
Technical Specifications
| Parameter | Symbol | N-Channel (Typ.) | P-Channel (Typ.) | Unit | Conditions |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | - | V | |
| - | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | ||
| 20 | V | ||||
| Continuous Drain Current | ID | 5.3 | -4.9 | A | TC = 25 C |
| 4.7 | -4.5 | A | TC = 70 C | ||
| 4.3 | -4.2 | A | TA = 25 C, b, c | ||
| 3.4 | -3.2 | A | TA = 70 C, b, c | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | -1.3 | V | VDS = VGS, ID = 250 A |
| 3 | -3 | V | VDS = VGS, ID = 250 A (Max.) | ||
| Drain-Source On-State Resistance | RDS(on) | 0.026 | - | VGS = 10 V, ID = 4.3 A | |
| - | 0.055 | VGS = -10 V, ID = -3.1 A | |||
| Total Gate Charge | Qg | 6 | 8 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A |
| - | - | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A | ||
| Input Capacitance | Ciss | 665 | 650 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz |
| - | - | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 75 | 95 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz |
| - | - | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 40 | 60 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz |
| - | - | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | ||
| Turn-On Delay Time | td(on) | 15 | 30 | ns | VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 4.5 V, Rg = 1 |
| - | - | ns | VDD = -30 V, RL = 12.5 , ID -2.4 A, VGEN = -4.5 V, Rg = 1 | ||
| Fall Time | tf | 10 | 30 | ns | VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 4.5 V, Rg = 1 |
| - | - | ns | VDD = -30 V, RL = 12.5 , ID -2.4 A, VGEN = -4.5 V, Rg = 1 | ||
| Body Diode Voltage | VSD | 0.8 | -0.8 | V | IS = 1.7 A, TJ = 25 C |
| 1.2 | -1.2 | V | IS = 1.7 A, TJ = 25 C (Max.) | ||
| Body Diode Reverse Recovery Time | trr | 30 | 30 | ns | IF = 1.7 A, dI/dt = 100 A/s, TJ = 25 C |
| - | - | ns | IF = -2 A, dI/dt = -100 A/s, TJ = 25 C | ||
2504180925_VBsemi-Elec-SI4599DY-T1-GE3-VB_C6705316.pdf
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