High Current Dual N Channel MOSFET VBsemi Elec FDS9945 NL VB Featuring Trench Power MOSFET Structure
Key Attributes
Model Number:
FDS9945-NL-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
2 N-Channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
4W
Gate Charge(Qg):
11.7nC@10V
Mfr. Part #:
FDS9945-NL-VB
Package:
SO-8
Product Description
Product Overview
The FDS9945-NL-VB is a Dual N-Channel MOSFET designed for high-performance applications. It features a trench power MOSFET structure, offering 100% Rg and UIS testing for reliability. This device is suitable for applications requiring efficient power switching with a breakdown voltage of 60V and a continuous drain current of 7A per leg.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | - | - | V |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.5 | 2.0 | 2.5 | V |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 60 V | - | - | 1 | A |
| Zero Gate Voltage Drain Current (TJ = 125 C) | IDSS | VGS = 0 V, VDS = 60 V, TJ = 125 C | - | - | 50 | A |
| On-State Drain Current | ID(on) | VDS VGS = 10 V | 20 | - | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 4.5 A | - | 0.028 | - | |
| Drain-Source On-State Resistance (TJ = 125 C) | RDS(on) | VGS = 10 V, ID = 4.5 A, TJ = 125 C | - | 0.066 | - | |
| Drain-Source On-State Resistance (TJ = 175 C) | RDS(on) | VGS = 10 V, ID = 4.5 A, TJ = 175 C | - | 0.081 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 4 A | - | 0.030 | - | |
| Forward Transconductance | gfs | VDS = 15 V, ID = 4.5 A | - | 15 | - | S |
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 600 | 700 | pF |
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 110 | 140 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 50 | 62 | pF |
| Total Gate Charge | Qg | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 11.7 | 18 | nC |
| Gate-Source Charge | Qgs | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 1.8 | 2.7 | nC |
| Gate-Drain Charge | Qgd | VGS = 10 V, VDS = 30 V, ID = 5.3 A | - | 2.8 | 4.2 | nC |
| Gate Resistance | Rg | f = 1 MHz | - | 1.3 | - | |
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 7 | 11 | ns |
| Rise Time | tr | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 3 | 5 | ns |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 22.4 | 33.5 | ns |
| Fall Time | tf | VDD = 30 V, RL = 6.8 , ID 4.4 A, VGEN = 10 V, Rg = 1 | - | 2.1 | 3.2 | ns |
| Pulsed Current | ISM | - | - | - | 28 | A |
| Forward Voltage | VSD | IF = 2 A, VGS = 0 V | - | 0.75 | 1.1 | V |
| Junction-to-Ambient Thermal Resistance | RthJA | PCB Mount | - | - | 110 | C/W |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | - | - | 34 | - | C/W |
2504171620_VBsemi-Elec-FDS9945-NL-VB_C558131.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
