Low On Resistance N Channel Trench MOSFET VBsemi Elec FDS5670 NL VB for Low Side Synchronous Rectifier
Key Attributes
Model Number:
FDS5670-NL-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
FDS5670-NL-VB
Package:
SO-8
Product Description
Product Overview
The FDS5670-NL-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient "Low Side" synchronous rectifier operation. It offers optimized performance for applications like CCFL inverters, featuring low on-resistance and robust electrical characteristics. This device is halogen-free, adhering to IEC 61249-2-21 standards.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | V | ||
| VDS Temperature Coefficient | VDS/TJ | ID = 250 A | 55 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.0 | 3.0 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V, TJ = 55 C | 10 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 25 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 4.6 A | 0.012 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 4.2 A | 0.015 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 4.6 A | 20 | S | ||
| Input Capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 1100 | pF | ||
| Output Capacitance | Coss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 90 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 55 | pF | ||
| Total Gate Charge | Qg | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 21 | 32 | nC | |
| Gate-Source Charge | Qgs | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 10.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 1 | nC | ||
| Gate Resistance | Rg | 3.3 | 5 | |||
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 20 | 30 | ns | |
| Rise Time | tr | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 150 | 225 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 20 | 30 | ns | |
| Fall Time | tf | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 60 | 90 | ns | |
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 10 | 15 | ns | |
| Rise Time | tr | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 15 | 25 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 25 | 40 | ns | |
| Fall Time | tf | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 10 | 15 | ns | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 4.2 | A | ||
| Pulse Diode Forward Current | ISM | 25 | A | |||
| Body Diode Voltage | VSD | IS = 2 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 25 | 50 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 25 | 50 | nC | |
| Reverse Recovery Fall Time | ta | 19 | ns | |||
| Reverse Recovery Rise Time | tb | 6 | ns |
2504171620_VBsemi-Elec-FDS5670-NL-VB_C5878792.pdf
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