Switching Device TWGMC 2N7002KT Plastic Encapsulate Mosfet in Compact SOT523 Package for Electronics
Key Attributes
Model Number:
2N7002KT
Product Custom Attributes
Mfr. Part #:
2N7002KT
Package:
SOT-523
Product Description
Product Overview
The 2N7002KT is a Plastic-Encapsulate MOSFET in a SOT-523 package. It offers low on-resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and ESD protection up to 2KV. This device is suitable for various applications requiring efficient switching and low power consumption.
Product Attributes
- Brand: tw-gmc.com
- Product Code: 2N7002KT
- Package Type: SOT-523
- Marking: K72
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit | Conditions |
| Drain Source Breakdown Voltage | BVDSS | 60 | - | V | ID = 10 A |
| Zero Gate Voltage Drain Current | IDSS | - | 1 | A | VDS = 60 V |
| Gate Source Leakage Current | IGSS | - | ±10 | A | VGS = ±20 V |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = 10 V, ID = 250 A |
| Static Drain Source On-Resistance | RDS(ON) | - | 3 | Ω | VGS = 10 V, ID = 500 mA |
| Static Drain Source On-Resistance | RDS(ON) | - | 4 | Ω | VGS = 4.5 V, ID = 200 mA |
| Forward Transconductance | gfs | 80 | - | mS | VDS = 10 V, ID = 200 mA |
| Input Capacitance | Ciss | - | 50 | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 25 | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 5 | pF | VDS = 25 V, f = 1 MHz |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Drain Current (Continuous) | ID | 300 | mA |
| Drain Current (Pulse Width ≤10 s) | IDM | 800 | mA |
| Total Power Dissipation | Ptot | 350 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 to +150 | °C |
2510141655_TWGMC-2N7002KT_C52117606.pdf
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