VBsemi Elec APM4050PUC TRL VB Power MOSFET Featuring TrenchFET Technology and Low Thermal Resistance
Key Attributes
Model Number:
APM4050PUC-TRL-VB
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
352pF
Number:
1 P-Channel
Output Capacitance(Coss):
508pF
Input Capacitance(Ciss):
3nF@25V
Pd - Power Dissipation:
136W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
APM4050PUC-TRL-VB
Package:
TO-252
Product Description
Product Overview
The APM4050PUC-TRL-VB is a P-Channel Power MOSFET featuring TrenchFET technology for low thermal resistance and high performance. It is 100% tested for Rg and UIS, making it suitable for various power management applications.
Product Attributes
- Brand: VBsemi
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| P-Channel 40 V (D-S) MOSFET | ||||||
| Drain-Source Voltage | VDS | VGS = 0 V, ID = -250 A | -40 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 A | -1.0 | -3.5 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = -40 V | -1 | A | ||
| Zero Gate Voltage Drain Current (TJ = 125 C) | IDSS | VGS = 0 V, VDS = -40 V | -50 | A | ||
| On-State Drain Current | ID(on) | VGS = -10 V, VDS -5 V | -50 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -17 A | 0.012 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5 V, ID = -14 A | 0.015 | |||
| Forward Transconductance | gfs | VDS = -15 V, ID = -17 A | 61 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V, f = 1 MHz | 3000 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = -25 V, f = 1 MHz | 508 | 635 | pF | |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = -25 V, f = 1 MHz | 352 | 440 | pF | |
| Total Gate Charge | Qg | VGS = -10 V, VDS = -30 V, ID = -50 A | 60 | 80 | nC | |
| Gate-Source Charge | Qgs | VGS = -10 V, VDS = -30 V, ID = -50 A | 5.7 | 8.6 | nC | |
| Gate-Drain Charge | Qgd | VGS = -10 V, VDS = -30 V, ID = -50 A | 14.7 | 22 | nC | |
| Gate Resistance | Rg | f = 1 MHz | 1.5 | 4.5 | ||
| Turn-On Delay Time | td(on) | VDD = -20 V, RL = 0.4 , ID -50 A, VGEN = -10 V, Rg = 1 | 10 | 15 | ns | |
| Rise Time | tr | VDD = -20 V, RL = 0.4 , ID -50 A, VGEN = -10 V, Rg = 1 | 12 | 18 | ns | |
| Turn-Off Delay Time | td(off) | VDD = -20 V, RL = 0.4 , ID -50 A, VGEN = -10 V, Rg = 1 | 40 | 60 | ns | |
| Fall Time | tf | VDD = -20 V, RL = 0.4 , ID -50 A, VGEN = -10 V, Rg = 1 | 16 | 24 | ns | |
| Forward Voltage (Diode) | VSD | IF = -50 A, VGS = 0 V | -1 | -1.5 | V |
2411201842_VBsemi-Elec-APM4050PUC-TRL-VB_C6705253.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
