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quality power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge factory
quality power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge factory

power switching device VBsemi Elec VBP165I60 650V IGBT with low VCEsat and ultra low gate charge

Key Attributes
Model Number: VBP165I60
Product Custom Attributes
Mfr. Part #:
VBP165I60
Package:
TO-247
Product Description

Product Overview

The VBP165I60 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). It is widely used in telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (PV inverters), and switch mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBP165I60
  • Package: TO-247
  • RoHS Compliant: Yes
  • Halogen-Free: Yes

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE 650 V
Continuous Collector Current IC TC=25 120 A
Continuous Collector Current IC TC=100 60 A
Collector-Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V 1.7 V
Pulsed Collector Current ICM 180 A
Maximum Power Dissipation PD TC = 25 C 450 W
Maximum Power Dissipation PD TC = 100 C 200 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 +175 C
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 650 - - V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 650 V, VGE = 0 V, TJ = 25 C - 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 650 V, VGE = 0 V, TJ = 150 C - - 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V - - 100 nA
Forward Transconductance gfs VCE = 20 V, IC = 60 A - 40 - S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz - 6210 - pF
Output Capacitance Coes - 228 - pF
Reverse Transfer Capacitance Cres - 60 - pF
Turn-on Energy Eon VCE = 400 V, VGE = 15 V, IC = 60 A, Rg = 10 - 0.76 - mJ
Turn-off Energy Eoff VCE = 400 V, VGE = 15 V, IC = 60 A, Rg = 10 - 1.50 - mJ
Total Gate Charge Qg IC = 60 A, VCE = 400 V, VGE = 15 V - 165 - nC
Gate-Emitter Charge Qge - 18 - nC
Gate to Collector Charge Qgc - 2 3 nC
Turn-On Delay Time td(on) - 72 - ns
Rise Time tr - 42 - ns
Turn-Off Delay Time td(off) - 70 - ns
Fall Time tf - 26 - ns
Internal Emitter Inductance LE measured 5 mm from case - - 13 nH
Diode Forward Current IF - - 60 A
Pulsed Diode Forward Current IFM - - 180 A
Diode Forward Voltage VF IF = 60 A - - 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 60 A, dIF/dt = 200 A/s, VR = 400 V - - 60 ns
Reverse Recovery Charge Qrr - - 0.3 C
Reverse Recovery Current IRRM - - 1 A
Maximum Junction-to-Ambient Thermal Resistance RthJA - 40 - C/W
Maximum Junction-to-Case Thermal Resistance RthJC - 0.5 - C/W

2412131800_VBsemi-Elec-VBP165I60_C42412439.pdf

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