NPN transistor YANGJIE MMST2222AQ with UL94 V0 flammability rating and moisture sensitivity level 1
Product Overview
The MMST2222AQ is an NPN general-purpose amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a high conductance, epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This device is moisture sensitivity level 1 and is AEC-Q101 qualified, making it suitable for switching and linear amplification applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS, AEC-Q101 Qualified
- Flammability Rating: UL-94 V-0
- Halogen Free: Yes
- Moisture Sensitivity Level: 1
Technical Specifications
| Item | Symbol | Unit | Value | Conditions |
| Collector-Base Voltage | VCBO | V | 75 | |
| Collector-Emitter Voltage | VCEO | V | 40 | |
| Emitter-Base Voltage | VEBO | V | 6 | |
| Collector Current -Continuous | IC | mA | 600 | |
| Total Device Dissipation (*) | PD | mW | 200 | (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch. |
| Thermal Resistance Junction to Ambient (*) | RthJA | K/W | 625 | (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch. |
| Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | V | 75 | IC=10uA,IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO* | V | 40 | IC =10mA,IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | V | 6 | IE=10A,IC=0 |
| Collector cut-off current | ICEX | nA | 10 | VCE=60V, VBE=3V |
| Base cut-off current | ICBO | nA | 100 | VCE=60V, IC =0 |
| Emitter cut-off current | IEBO | nA | 100 | VEB=3 V, IC =0 |
| DC current gain | hFE | 40 | VCE=10V,IC=0.1mA | |
| DC current gain | hFE | 50 | VCE=10V,IC=1mA | |
| DC current gain | hFE | 75 | VCE=10V,IC=10mA | |
| DC current gain | hFE | 100-300 | VCE=10V,IC=150mA | |
| DC current gain | hFE | 40 | VCE=10V,IC=500mA | |
| Collector-emitter saturation voltage | VCE(sat) | V | 0.3 | IC=150mA,IB=15mA |
| Collector-emitter saturation voltage | VCE(sat) | V | 1.0 | IC=500mA,IB=50mA |
| Base-emitter saturation voltage | VBE(sat) | V | 0.6-1.2 | IC=150mA,IB=15mA |
| Base-emitter saturation voltage | VBE(sat) | V | 2.0 | IC=500mA,IB=50mA |
| Transition frequency | fT | MHz | 250 | VCE=20V,IC=20mA,f=100MHz |
| Delay time | td | ns | 10 | VCC=30V, VBE(off)=-0.5V IC=150mA,IB1=15mA |
| Rise time | tr | ns | 25 | VCC=30V,IC=150mA,IB1=IB2=15mA |
| Storage time | ts | ns | 225 | VCC=30V,IC=150mA,IB1=IB2=15mA |
| Fall time | tf | ns | 60 | VCC=30V,IC=150mA,IB1=IB2=15mA |
2411071802_YANGJIE-MMST2222AQ_C20168703.pdf
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