NPN transistor YANGJIE MMST2222AQ with UL94 V0 flammability rating and moisture sensitivity level 1

Key Attributes
Model Number: MMST2222AQ
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
300@150mA,10V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
1V@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMST2222AQ
Package:
SOT-323
Product Description

Product Overview

The MMST2222AQ is an NPN general-purpose amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a high conductance, epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This device is moisture sensitivity level 1 and is AEC-Q101 qualified, making it suitable for switching and linear amplification applications.

Product Attributes

  • Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
  • Origin: China
  • Certifications: RoHS, AEC-Q101 Qualified
  • Flammability Rating: UL-94 V-0
  • Halogen Free: Yes
  • Moisture Sensitivity Level: 1

Technical Specifications

ItemSymbolUnitValueConditions
Collector-Base VoltageVCBOV75
Collector-Emitter VoltageVCEOV40
Emitter-Base VoltageVEBOV6
Collector Current -ContinuousICmA600
Total Device Dissipation (*)PDmW200(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch.
Thermal Resistance Junction to Ambient (*)RthJAK/W625(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch.
Junction TemperatureTj-55 to +150
Storage TemperatureTSTG-55 to +150
Collector-base breakdown voltageV(BR)CBOV75IC=10uA,IE=0
Collector-emitter breakdown voltageV(BR)CEO*V40IC =10mA,IB=0
Emitter-base breakdown voltageV(BR)EBOV6IE=10A,IC=0
Collector cut-off currentICEXnA10VCE=60V, VBE=3V
Base cut-off currentICBOnA100VCE=60V, IC =0
Emitter cut-off currentIEBOnA100VEB=3 V, IC =0
DC current gainhFE40VCE=10V,IC=0.1mA
DC current gainhFE50VCE=10V,IC=1mA
DC current gainhFE75VCE=10V,IC=10mA
DC current gainhFE100-300VCE=10V,IC=150mA
DC current gainhFE40VCE=10V,IC=500mA
Collector-emitter saturation voltageVCE(sat)V0.3IC=150mA,IB=15mA
Collector-emitter saturation voltageVCE(sat)V1.0IC=500mA,IB=50mA
Base-emitter saturation voltageVBE(sat)V0.6-1.2IC=150mA,IB=15mA
Base-emitter saturation voltageVBE(sat)V2.0IC=500mA,IB=50mA
Transition frequencyfTMHz250VCE=20V,IC=20mA,f=100MHz
Delay timetdns10VCC=30V, VBE(off)=-0.5V IC=150mA,IB1=15mA
Rise timetrns25VCC=30V,IC=150mA,IB1=IB2=15mA
Storage timetsns225VCC=30V,IC=150mA,IB1=IB2=15mA
Fall timetfns60VCC=30V,IC=150mA,IB1=IB2=15mA

2411071802_YANGJIE-MMST2222AQ_C20168703.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.