Dual NPN PNP Small Signal Transistor SOT363 Package YANGJIE BC846BPN RoHS Compliant for Electronics
Key Attributes
Model Number:
BC846BPN
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
DC Current Gain:
450@2mA,5V
Transition Frequency(fT):
100MHz
Number:
1 NPN + 1 PNP
Type:
NPN+PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC846BPN
Package:
SOT-363
Product Description
Product Overview
The BC846BPN is a dual NPN+PNP small signal transistor in an SOT-363 surface mount package. It is designed for automatic insertion and meets UL-94 V-0 flammability rating. This transistor is suitable for general-purpose applications in electronic equipment.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Package: SOT-363
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Marking: PJ
- Certifications: RoHS COMPLIANT
Technical Specifications
| Component | Item | Symbol | Unit | Conditions | Min | TYP | Max |
| TR1 (NPN) | Collector-Base Voltage | VCBO | V | IC=10A,IE=0 | 80 | ||
| Collector-Emitter Voltage | VCEO | V | IC =10mA,IB=0 | 65 | |||
| Emitter-Base Voltage | VEBO | V | IE=10A,IC=0 | 6 | |||
| Collector Current | IC | mA | 100 | ||||
| Collector Power Dissipation | PC | mW | 200 | ||||
| Junction Temperature | Tj | -55 | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Collector-base breakdown voltage | VCBO | V | IC=10A,IE=0 | 80 | |||
| Collector-emitter breakdown voltage | VCEO | V | IC =10mA,IB=0 | 65 | |||
| Emitter-base breakdown voltage | VEBO | V | IE=10A,IC=0 | 6 | |||
| DC current gain | hFE | VCE=5V,IC=2mA | 200 | 450 | |||
| Transition frequency | fT | MHz | VCE=5V,IC=10mA,f=100MHz | 100 | |||
| TR2 (PNP) | Collector-Base Voltage | VCBO | V | IC=-10A,IE=0 | -80 | ||
| Collector-Emitter Voltage | VCEO | V | IC =-10mA,IB=0 | -65 | |||
| Emitter-Base Voltage | VEBO | V | IE=-10A,IC=0 | -6 | |||
| Collector Current | IC | mA | -100 | ||||
| Collector Power Dissipation | PC | mW | 200 | ||||
| Junction Temperature | Tj | -55 | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Collector-base breakdown voltage | VCBO | V | IC=-10A,IE=0 | -80 | |||
| Collector-emitter breakdown voltage | VCEO | V | IC =-10mA,IB=0 | -65 | |||
| Emitter-base breakdown voltage | VEBO | V | IE=-10A,IC=0 | -6 | |||
| DC current gain | hFE | VCE=-5V,IC=-2mA | 200 | 450 | |||
| Transition frequency | fT | MHz | VCE=-5V,IC=-10mA,f=100MHz | 100 |
2401111729_YANGJIE-BC846BPN_C20599855.pdf
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