LowSide Synchronous Rectifier 60V NChannel Trench Power MOSFET VBsemi Elec SI4850DY-T1-E3-VB Device
Key Attributes
Model Number:
SI4850DY-T1-E3-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V;10.5nC@4.5V
Mfr. Part #:
SI4850DY-T1-E3-VB
Package:
SO-8
Product Description
Product Overview
The SI4850DY-T1-E3-VB is a 60-V N-Channel Trench Power MOSFET optimized for low-side synchronous rectifier operation. It offers high efficiency and is suitable for applications like CCFL inverters. This device is halogen-free and has undergone 100% Rg and UIS testing.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (According to IEC 61249-2-21 Definition)
- Material: Trench Power MOSFET
- Origin: Taiwan
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | V | ||
| VDS Temperature Coefficient | ╯VDS/TJ | ID = 250 A | 55 | mV/C | ||
| VGS(th) Temperature Coefficient | ╯VGS(th)/TJ | -6.3 | mV/C | |||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.2 | 2.5 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 1 | A | ||
| VDS = 60 V, VGS = 0 V, TJ = 55 C | 10 | A | ||||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 25 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 4.6 A | 0.025 | |||
| VGS = 4.5 V, ID = 4.2 A | 0.035 | |||||
| Forward Transconductance | gfs | VDS = 15 V, ID = 4.6 A | 20 | S | ||
| Dynamic | ||||||
| Input Capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 1100 | pF | ||
| Output Capacitance | Coss | 90 | ||||
| Reverse Transfer Capacitance | Crss | 55 | ||||
| Total Gate Charge | Qg | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 21 | 32 | nC | |
| VDS = 30 V, VGS = 4.5 V, ID = 4.6 A | 16.5 | nC | ||||
| Gate-Source Charge | Qgs | 3.5 | nC | |||
| Gate-Drain Charge | Qgd | 4.2 | nC | |||
| Gate Resistance | Rg | f = 1 MHz | 3.3 | 5 | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 4.2 | A | ||
| Pulse Diode Forward Current | ISM | 25 | A | |||
| Body Diode Voltage | VSD | IS = 2 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 25 | 50 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 25 | 50 | nC | ||
Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (TC = 25 C) | IDa | 7.6 | A |
| Continuous Drain Current (TC = 70 C) | IDa | 6.8 | A |
| Continuous Drain Current (TA = 25 C)b, c | IDa | 4.8 | A |
| Continuous Drain Current (TA = 70 C)b, c | IDa | 6.1 | A |
| Pulsed Drain Current | IDM | 25 | A |
| Continuous Source-Drain Diode Current | IS | 4.2 | A |
| Avalanche Current (L = 0.1 mH) | IAS | 15 | A |
| Single-Pulse Avalanche Energy | EAS | 11.2 | mJ |
| Maximum Power Dissipation (TC = 25 C) | PD | 5 | W |
| Maximum Power Dissipation (TC = 70 C) | PD | 3.2 | W |
| Maximum Power Dissipation (TA = 25 C)b, c | PD | 1.6 | W |
| Maximum Power Dissipation (TA = 70 C)b, c | PD | 2.5 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | C |
Thermal Resistance Ratings
| Parameter | Symbol | Typical | Maximum | Unit |
| Maximum Junction-to-Ambient (t 10 s)b, d | RthJA | 38 | 50 | C/W |
| Maximum Junction-to-Foot (Drain) Steady State | RthJF | 20 | 25 | C/W |
2504180925_VBsemi-Elec-SI4850DY-T1-E3-VB_C6705319.pdf
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