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quality P Channel 30 Volt MOSFET VBsemi Elec IRF9328TRPBF VB Trench Power Device for Computing Applications factory
quality P Channel 30 Volt MOSFET VBsemi Elec IRF9328TRPBF VB Trench Power Device for Computing Applications factory

P Channel 30 Volt MOSFET VBsemi Elec IRF9328TRPBF VB Trench Power Device for Computing Applications

Key Attributes
Model Number: IRF9328TRPBF-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
325pF
Number:
1 P-Channel
Output Capacitance(Coss):
380pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.96nF
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
IRF9328TRPBF-VB
Package:
SO-8
Product Description

Product Overview

The IRF9328TRPBF-VB is a P-Channel 30-V (D-S) Trench Power MOSFET designed for load switching applications in notebook and desktop PCs. It features 100% Rg and UIS tested, offering high performance and reliability.

Product Attributes

  • Brand: VBsemi
  • Certifications: Halogen-free According to IEC 61249-2-21 Available
  • Origin: Taiwan

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 30V
VDS Temperature CoefficientVDS/TJID = - 250 A- 31mV/C
Gate-Source Threshold VoltageVGS(th)VDS = VGS, ID = - 250 A- 1.0- 3.0V
VGS(th) Temperature CoefficientVGS(th)/TJVDS = VGS, ID = - 250 A- 5.5mV/C
Gate-Source LeakageIGSSVDS = 0 V, VGS = 25 V 100nA
Zero Gate Voltage Drain CurrentIDSSVDS = - 30 V, VGS = 0 V- 1 A
Zero Gate Voltage Drain CurrentIDSSVDS = - 30 V, VGS = 0 V, TJ = 55 C- 5A
On-State Drain CurrentID(on)VDS - 10 V, VGS = - 10 V- 30A
Drain-Source On-State ResistanceRDS(on)VGS = - 10 V, ID = - 10 A0.011
Drain-Source On-State ResistanceRDS(on)VGS = - 4.5 V, ID = - 7 A0.012
Forward TransconductancegfsVDS = - 10 V, ID = - 10 A23S
Input CapacitanceCissVDS = - 15 V, VGS = 0 V, f = 1 MHz1960pF
Output CapacitanceCossVDS = - 15 V, VGS = 0 V, f = 1 MHz380pF
Reverse Transfer CapacitanceCrssVDS = - 15 V, VGS = 0 V, f = 1 MHz325pF
Total Gate ChargeQgVDS = - 15 V, VGS = - 10 V, ID = - 10 A4365nC
Gate-Source ChargeQgsVDS = - 15 V, VGS = - 4.5 V, ID = - 10 A2233nC
Gate-Drain ChargeQgdVDS = - 15 V, VGS = - 10 V, ID = - 10 A11nC
Gate ResistanceRgf = 1 MHz0.31.3
Turn-On Delay Timetd(on)VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1 1122ns
Rise TimetrVDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1 1325ns
Turn-Off DelayTimetd(off)VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1 3250ns
Fall TimetfVDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1 918ns
Turn-On Delay Timetd(on)VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1 4470ns
Rise TimetrVDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1 100160ns
Turn-Off DelayTimetd(off)VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1 2850ns
Fall TimetfVDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1 1530ns
Continuous Source-Drain Diode CurrentISTC = 25 C- 4.6A
Pulse Diode Forward CurrentISM- 50A
Body Diode VoltageVSDIS = - 2 A, VGS = 0 V- 0.75- 1.2V
Body Diode Reverse Recovery TimetrrIF = - 2 A, dI/dt = 100 A/s, TJ = 25 C2845ns
Body Diode Reverse Recovery ChargeQrrIF = - 2 A, dI/dt = 100 A/s, TJ = 25 C2040nC
Reverse Recovery Fall TimetaIF = - 2 A, dI/dt = 100 A/s, TJ = 25 C13ns
Reverse Recovery Rise TimetbIF = - 2 A, dI/dt = 100 A/s, TJ = 25 C15ns

2504180925_VBsemi-Elec-IRF9328TRPBF-VB_C4355085.pdf

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