Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter
Key Attributes
Model Number:
PHE13003A,412
Product Custom Attributes
Current - Collector Cutoff:
-
DC Current Gain:
7.5@800mA,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
400mV
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHE13003A,412
Package:
TO-92
Product Description
Product Overview
The PHE13003A is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.
Product Attributes
- Brand: WeEn Semiconductors
- Package Type: SOT54 (TO-92)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Static characteristics | ||||||
| ICES | collector-emitter cut-off current (base shorted) | VBE = 0 V; VCE = 700 V; Tj = 125 C | - | - | 5 | mA |
| IEBO | emitter-base cut-off current (collector open) | VEB = 9 V; IC = 0 A; Tlead = 25 C | - | - | 1 | mA |
| VCEOsus | collector-emitter sustaining voltage (base open) | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5 | 400 | - | - | V |
| VCEsat | collector-emitter saturation voltage | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6 | - | 0.2 | 0.5 | V |
| IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6 | - | 0.3 | 1 | V | ||
| IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6 | - | 0.4 | 1.5 | V | ||
| VBEsat | base-emitter saturation voltage | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7 | - | - | 1 | V |
| IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7 | - | - | 1.2 | V | ||
| hFE | DC current gain | IC = 0.5 mA; VCE = 2 V; Tlead = 25 C; Fig. 8; Fig. 9 | 12 | - | - | |
| IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | 10 | - | 30 | |||
| IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | 5 | 7.5 | 20 | |||
| Dynamic characteristics | ||||||
| tf | fall time | IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11 | - | 80 | - | ns |
| Limiting values | ||||||
| VCESM | collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| VCBO | collector-base voltage | IE = 0 A | - | - | 700 | V |
| VCEO | collector-emitter voltage | IB = 0 A | - | - | 400 | V |
| VEBO | emitter-base voltage | IC = 0 A; I(Emitter) = 10 mA | - | - | 9 | V |
| IC | collector current DC; Fig. 1 | - | - | 1 | A | |
| ICM | peak collector current | - | - | 2 | A | |
| IB | base current DC | - | - | 0.5 | A | |
| IBM | peak base current | - | - | 1 | A | |
| Ptot | total power dissipation | Tlead 25 C; Fig. 2 | - | - | 2.1 | W |
| Tstg | storage temperature | -65 | - | 150 | C | |
| Tj | junction temperature | - | - | 150 | C | |
| Thermal characteristics | ||||||
| Rth(j-lead) | thermal resistance from junction to lead | Fig. 3 | - | - | 60 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient free air | printed circuit board mounted; lead length = 4 mm | - | 150 | - | K/W |
2410010400_WeEn-PHE13003A-412_C256389.pdf
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