WeEn BT148-400R 127 SCR planar passivated sensitive gate SIP3 package for phase control applications
Key Attributes
Model Number:
BT148-400R,127
Product Custom Attributes
Current - Collector Cutoff:
-
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
-
Type:
-
Pd - Power Dissipation:
-
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
-
Mfr. Part #:
BT148-400R,127
Package:
SOT-82-3
Product Description
Product Overview
The BT148-400R is a planar passivated SCR with a sensitive gate, housed in a SIP3 (SOT82) plastic package. It is designed for general-purpose switching and phase control applications, offering direct interfacing with microcontrollers, logic ICs, and other low-power gate trigger circuits. Key features include voltage ruggedness, reliability, and direct triggering capabilities.
Product Attributes
- Brand: WeEn Semiconductors
- Package Type: SIP3 (SOT82)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VRRM | Repetitive peak reverse voltage | - | - | - | 400 | V |
| IT(AV) | Average on-state current | Half sine wave; Tmb ≤ 113 °C; Fig. 1 | - | - | 2.5 | A |
| IT(RMS) | RMS on-state current | Half sine wave; Tmb ≤ 113 °C; Fig. 2; Fig. 3 | - | - | 4 | A |
| ITSM | Non-repetitive peak on-state current | Half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | - | - | 38 | A |
| Tj | Junction temperature | [1] | - | - | 125 | °C |
| IGT | Gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 | - | 15 | 200 | µA |
| dVD/dt | Rate of rise of off-state voltage | VDM = 268 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 | - | 50 | - | V/µs |
| VDRM | Repetitive peak off-state voltage | [1] | - | - | 400 | V |
| I2t | I2t for fusing | tp = 10 ms; SIN | - | - | 6.1 | A²s |
| dIT/dt | Rate of rise of on-state current | IT = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs | - | - | 50 | A/µs |
| IGM | Peak gate current | - | - | - | 2 | A |
| VRGM | Peak reverse gate voltage | - | - | - | 5 | V |
| PGM | Peak gate power | - | - | - | 5 | W |
| PG(AV) | Average gate power over any 20 ms period | - | - | - | 0.5 | W |
| Tstg | Storage temperature | -40 | - | 150 | °C | |
| Rth(j-mb) | Thermal resistance from junction to mounting base | Fig. 6 | - | - | 2.5 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient free air | In free air | - | 95 | - | K/W |
| IL | Latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 | - | 0.17 | 10 | mA |
| IH | Holding current | VD = 12 V; Tj = 25 °C; Fig. 9 | - | 0.1 | 6 | mA |
| VT | On-state voltage | IT = 5 A; Tj = 25 °C; Fig. 10 | - | 1.23 | 1.8 | V |
| VGT | Gate trigger voltage | VD = 400 V; IT = 0.1 A; Tj = 110 °C; Fig. 11 | 0.1 | - | 0.2 | V |
| ID | Off-state current | VD = 400 V; Tj = 125 °C | - | 0.1 | 0.5 | mA |
| IR | Reverse current | VR = 400 V; Tj = 125 °C | - | 0.1 | 0.5 | mA |
| tgt | Gate-controlled turn-on time | ITM = 10 A; VD = 400 V; IG = 5 mA; dIG/dt = 0.2 A/µs; Tj = 25 °C | - | 2 | - | µs |
| tq | Commutated turn-off time | VDM = 268 V; Tj = 125 °C; ITM = 8 A; VR = 10 V; (dIT/dt)M = 10 A/µs; dVD/dt = 2 V/µs; RGK(ext) = 1 kΩ; (VDM = 67% of VDRM) | - | 100 | - | µs |
2104061005_WeEn-BT148-400R-127_C602059.pdf
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