WeEn BUJ100LR 412 high voltage NPN transistor for in CFL electronic ballasts and inverter applications
Key Attributes
Model Number:
BUJ100LR,412
Product Custom Attributes
Current - Collector Cutoff:
1mA
DC Current Gain:
10@400mA,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
400mV
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
BUJ100LR,412
Package:
TO-92-3
Product Description
WeEn Semiconductors BUJ100LR NPN Power Transistor
The BUJ100LR is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.
Product Attributes
- Brand: WeEn Semiconductors
- Product Type: NPN power transistor
- Package: SOT54 (TO-92)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Peak Voltage (VCESM) | VBE = 0 V | - | - | 700 | V |
| Collector-Base Voltage (VCBO) | IE = 0 A | - | - | 700 | V |
| Collector-Emitter Voltage (VCEO) | IB = 0 A | - | - | 400 | V |
| Emitter-Base Voltage (VEBO) | IC = 0 A; I(Emitter) = 10 mA | - | - | 9 | V |
| Collector Current (IC) | DC; Fig. 1 | - | - | 1 | A |
| Peak Collector Current (ICM) | - | - | - | 2 | A |
| Base Current (IB) | DC | - | - | 0.5 | A |
| Peak Base Current (IBM) | - | - | - | 1 | A |
| Total Power Dissipation (Ptot) | Tlead 25 C; Fig. 2 | - | - | 2.1 | W |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Thermal Resistance (Rth(j-lead)) | Fig. 3 | - | - | 60 | K/W |
| Thermal Resistance (Rth(j-a)) | Printed circuit board mounted; lead length 4 mm | - | 150 | - | K/W |
| Collector-Emitter Cut-off Current (ICES) | VBE = 0 V; VCE = 700 V; Tj = 125 C | - | - | 5 | mA |
| Emitter-Base Cut-off Current (IEBO) | VEB = 9 V; IC = 0 A; Tlead = 25 C | - | - | 1 | mA |
| Collector-Emitter Sustaining Voltage (VCEOsus) | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5 | 400 | - | - | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6 | - | 0.2 | 0.5 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6 | - | 0.3 | 1 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6 | - | 0.4 | 1.5 | V |
| Base-Emitter Saturation Voltage (VBEsat) | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7 | - | - | 1 | V |
| Base-Emitter Saturation Voltage (VBEsat) | IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7 | - | - | 1.2 | V |
| DC Current Gain (hFE) | IC = 0.5 mA; VCE = 2 V; Tlead = 25 C | 12 | - | - | - |
| DC Current Gain (hFE) | IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | - | 10 | 30 | - |
| DC Current Gain (hFE) | IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | - | 5 | 20 | - |
| Fall Time (tf) | IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11 | - | 80 | - | ns |
2411220146_WeEn-BUJ100LR-412_C256384.pdf
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