MCR100-8-89 sensitive SCR 1A type with robust performance in residual current circuit breaker systems
Key Attributes
Model Number:
MCR100-8-89
Product Custom Attributes
Holding Current (Ih):
2mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
10A@50Hz
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+110℃
Mfr. Part #:
MCR100-8-89
Package:
SOT-89-3L
Product Description
Jiangsu Weida Semiconductor MCR100-8 Series 1A Sensitive SCRs
The MCR100-8 SCR series from Jiangsu Weida Semiconductor Co., Ltd. offers a high dv/dt rate and robust resistance to electromagnetic interference. These sensitive SCRs are specifically recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: MCR100-8
- Type: 1A Sensitive SCRs
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Note |
| RMS On-State Current | IT(RMS) | 1 | A | TC=80 | |
| Repetitive Peak Off-State Voltage | VDRM | 800 | V | Tj=25 | |
| Repetitive Peak Reverse Voltage | VRRM | 800 | V | Tj=25 | |
| Peak On-State Voltage | VTM | 1.5 | V | ITM=2A, tp=380s, Tj=25 | MAX |
| Non-Repetitive Surge Peak On-State Current | ITSM | 10 | A | Full cycle, F=50Hz | |
| I2t Value for Fusing | I2t | 0.5 | A2s | tp=10ms | |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | IG=2IGT | |
| Peak Gate Current | IGM | 0.2 | A | ||
| Average Gate Power Dissipation | PG(AV) | 0.1 | W | ||
| Peak Gate Power | PGM | 0.5 | W | ||
| Gate Trigger Current | IGT | 200 | A | VD=12V, RL=33 | MAX |
| Gate Trigger Voltage | VGT | 1.0 | V | MAX | |
| Gate Non-Trigger Voltage | VGD | 0.2 | V | VD=VDRM, Tj=110, RL=3.3k | MIN |
| Holding Current | IH | 3 | mA | IG=1.2IGT | MAX |
| Latching Current | IL | - | mA | ||
| Critical Rate of Rise of Off-State Voltage | dV/dt | 20 | V/s | VD=0.66VDRM, Tj=110, G, RGK=1K | MIN |
| On-State Leakage Current | IDRM/IRRM | 5 | A | VDRM=VRRM, RGK=1K, Tj=25 | MAX |
| On-State Leakage Current | IDRM/IRRM | 100 | A | VDRM=VRRM, RGK=1K, Tj=110 | MAX |
| Storage Junction Temperature Range | Tstg | -40~150 | |||
| Operating Junction Temperature Range | Tj | -40~110 | |||
| Thermal Resistance (Junction to Case) SOT-223-3L | Rth(j-c) | 25 | /W | ||
| Thermal Resistance (Junction to Case) TO-92 | Rth(j-c) | 50 | /W | ||
| Thermal Resistance (Junction to Case) SOT-23, SOT-23-3L, SOT-89-3L | Rth(j-c) | 28 | /W |
2410122024_WEIDA-MCR100-8-89_C41348444.pdf
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