6A Triac WEIDA BTB06-600CW with 600V Peak Voltage and Strong Electromagnetic Interference Resistance
Key Attributes
Model Number:
BTB06-600CW
Product Custom Attributes
Holding Current (Ih):
35mA
Current - Gate Trigger(Igt):
35mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
6A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
60A
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB06-600CW
Package:
TO-252
Product Description
Jiangsu Weida Semiconductor Co., Ltd. BTA06/BTB06 Series 6A Triacs
The BTA06/BTB06 series triacs are designed for high current shock loading and offer a high dv/dt rate with strong resistance to electromagnetic interference. These triacs provide excellent commutation performance, with 3-quadrant products particularly recommended for inductive loads. The BTA06 series offers a rated insulation voltage of 2500 VRMS from all three terminals to an external heatsink, complying with UL standards (File ref: E516503).
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BTA06/BTB06
- Product Type: 6A Triacs
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS On-State Current | IT(RMS) | 6 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800 | V | (Tj=25) |
| Peak On-State Voltage | VTM | 1.5 | V | (ITM=8.5A, tp=380s, Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 60 | A | (Full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 18 | A2s | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 2 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 5 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| Off-State Current | IDRM/IRRM | MAX 5 A | (VDRM=VRRM, Tj=25) | |
| Off-State Current | IDRM/IRRM | 0.5 mA | (VDRM=VRRM, Tj=125) | |
| Gate Trigger Current (3 Quadrants) | IGT | MAX 5 to 50 | mA | (VD=12V, RL=33, Quadrant dependent) |
| Gate Trigger Voltage (3 Quadrants) | VGT | 1.5 | V | (VD=12V, RL=33) |
| Gate Non-Trigger Voltage (3 Quadrants) | VGD | MIN 0.2 | V | (VD=VDRM) |
| Holding Current (3 Quadrants) | IH | MAX 6 to 60 | mA | (IT=100mA, Quadrant dependent) |
| Latching Current (3 Quadrants) | IL | MAX 10 to 80 | mA | (IG=1.2IGT, Quadrant dependent) |
| Critical Rate of Rise of Turn-on Rate of Voltage (3 Quadrants) | dV/dt | MIN 50 to 1000 | V/s | (VD=2/3VDRM, Tj=125, Gate open, Quadrant dependent) |
| Gate Trigger Current (4 Quadrants) | IGT | MAX 25 to 70 | mA | (VD=12V, RL=33, Quadrant dependent) |
| Gate Trigger Voltage (4 Quadrants) | VGT | 1.5 | V | (ALL Quadrants) |
| Gate Non-Trigger Voltage (4 Quadrants) | VGD | MIN 0.2 | V | (VD=VDRM, ALL Quadrants) |
| Holding Current (4 Quadrants) | IH | MAX 40 to 60 | mA | (IT=100mA, Quadrant dependent) |
| Latching Current (4 Quadrants) | IL | MAX 50 to 90 | mA | (IG=1.2IGT, Quadrant dependent) |
| Critical Rate of Rise of Turn-on Rate of Voltage (4 Quadrants) | dV/dt | MIN 200 to 500 | V/s | (VD=2/3VDRM, Tj=125, Gate open, Quadrant dependent) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.2 to 3.4 | /W | (Package dependent) |
2410122027_WEIDA-BTB06-600CW_C2901057.pdf
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