WeEn PHD13005127 NPN power transistor with anti parallel E C diode housed in SOT78 plastic package
Key Attributes
Model Number:
PHD13005,127
Product Custom Attributes
Current - Collector Cutoff:
100uA
DC Current Gain:
10@2A,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
300mV
Type:
NPN
Pd - Power Dissipation:
75W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHD13005,127
Package:
TO-220AB
Product Description
Product Overview
High voltage, high speed, planar passivated NPN power switching transistor with an integrated anti-parallel E-C diode, housed in a SOT78 plastic package. This transistor offers fast switching, high voltage capability, and low thermal resistance, making it suitable for various power applications.
Product Attributes
- Brand: WeEn Semiconductors
- Origin: Established as a global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd.
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| General Description | ||||||
| - | Product Type | NPN power transistor with integrated diode | - | - | - | - |
| - | Package | SOT78 (TO-220AB) | - | - | - | - |
| Quick Reference Data | ||||||
| IC | collector current | see Figure 1; see Figure 2; see Figure 4; DC | - | - | 4 | A |
| Ptot | total power dissipation | see Figure 3; Tmb 25 C | - | - | 75 | W |
| VCESM | collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| hFE | DC current gain | VCE = 5 V; IC = 1.0 A; see Figure 10 | 12 | 20 | 40 | V |
| hFE | DC current gain | VCE = 5 V; IC = 2.0 A; see Figure 10 | 10 | 17 | 28 | V |
| Limiting Values | ||||||
| VCESM | collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| VCBO | collector-base voltage | IE = 0 A | - | - | 700 | V |
| VCEO | collector-emitter voltage | IB = 0 A | - | - | 400 | V |
| IC | collector current | DC; see Figure 1; see Figure 2; see Figure 4 | - | - | 4 | A |
| ICM | peak collector current | see Figure 4; see Figure 1; see Figure 2 | - | - | 8 | A |
| IB | base current | DC | - | - | 2 | A |
| IBM | peak base current | - | - | 4 | A | |
| Ptot | total power dissipation | Tmb 25 C; see Figure 3 | - | - | 75 | W |
| Tstg | storage temperature | -65 | - | 150 | C | |
| Tj | junction temperature | - | - | 150 | C | |
| Thermal Characteristics | ||||||
| Rth(j-mb) | thermal resistance from junction to mounting base | see Figure 5 | - | - | 1.67 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient | in free air | - | 60 | - | K/W |
| Static Characteristics | ||||||
| ICES | collector-emitter cut-off current | VBE = 0 V; VCE = 700 V; Tj = 100 C [1] | - | - | 5 | mA |
| ICES | collector-emitter cut-off current | VBE = 0 V; VCE = 700 V [1] | - | - | 1 | mA |
| ICBO | collector-base cut-off current | VCB = 700 V; IE = 0 A [1] | - | - | 1 | mA |
| ICEO | collector-emitter cut-off current | VCE = 400 V; IB = 0 A [1] | - | - | 0.1 | mA |
| IEBO | emitter-base cut-off current | VEB = 9 V; IC = 0 A | - | - | 10 | mA |
| VCEOsus | collector-emitter sustaining voltage | IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 15 | 400 | - | - | V |
| VCEsat | collector-emitter saturation voltage | IC = 1.0 A; IB = 0.2 A; see Figure 7; see Figure 8 | - | 0.1 | 0.5 | V |
| VCEsat | collector-emitter saturation voltage | IC = 2.0 A; IB = 0.5 A; see Figure 7; see Figure 8 | - | 0.2 | 0.6 | V |
| VCEsat | collector-emitter saturation voltage | IC = 4.0 A; IB = 1.0 A; see Figure 7; see Figure 8 | - | 0.3 | 1 | V |
| VBEsat | base-emitter saturation voltage | IC = 2.0 A; IB = 0.5 A; see Figure 9 | - | 0.92 | 1.6 | V |
| VBEsat | base-emitter saturation voltage | IC = 1.0 A; IB = 0.2 A; see Figure 9 | - | 0.85 | 1.2 | V |
| VF | forward voltage | IF = 2.0 A | - | 1.04 | 1.5 | V |
| hFE | DC current gain | IC = 1.0 A; VCE = 5 V; see Figure 10 | 12 | 20 | 40 | - |
| hFE | DC current gain | IC = 2.0 A; VCE = 5 V; see Figure 10 | 10 | 17 | 28 | - |
| Dynamic Characteristics | ||||||
| ts | storage time | IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; inductive load; see Figure 11; see Figure 12 | - | 1.2 | 2 | s |
| ts | storage time | IC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; resistive load; see Figure 13; see Figure 14 | - | 2.7 | 4 | s |
| ts | storage time | IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 11; see Figure 12 | - | 1.4 | 4 | s |
| tf | fall time | IC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; resistive load; see Figure 13; see Figure 14 | - | 0.3 | 0.9 | s |
| tf | fall time | IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 11; see Figure 12 | - | 0.16 | 0.9 | s |
| tf | fall time | IC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; inductive load; see Figure 11; see Figure 12 | - | 0.1 | 0.5 | s |
2410121804_WeEn-PHD13005-127_C256391.pdf
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