High Shock Loading Triac WEIDA BTB10-800BW 10 Amp RMS Current and Excellent Commutation Performance

Key Attributes
Model Number: BTB10-800BW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
10A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
100A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB10-800BW
Package:
TO-263
Product Description

Jiangsu Weida Semiconductor Co., Ltd. BTA10/BTB10 Series 10A Triacs

The BTA10/BTB10 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for applications requiring high shock loading capability with large currents. They offer a high dv/dt rate, strong resistance to electromagnetic interference, and excellent commutation performance, making them particularly suitable for inductive loads. The BTA10 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.

Product Attributes

  • Brand: Jiangsu Weida Semiconductor Co., Ltd.
  • Series: BTA10/BTB10
  • Certifications: UL (File ref: E516503)

Technical Specifications

ParameterSymbolValueUnitDescription
RMS on-state currentIT(RMS)10AMain Feature
Repetitive peak off-state voltageVDRM600/800VAbsolute Maximum Ratings
Repetitive peak reverse voltageVRRM600/800VAbsolute Maximum Ratings
On-state voltage (max)VTM≤1.5VMain Feature / Static Characteristics
Non repetitive surge peak on-state current (full cycle, F=50Hz)ITSM100AAbsolute Maximum Ratings
I2t value for fusing (tp=10ms)I2t55A2sAbsolute Maximum Ratings
Critical rate of rise of on-state current(IG=2×IGT)dI/dt50A/μsAbsolute Maximum Ratings
Storage junction temperature rangeTstg-40~150°CAbsolute Maximum Ratings
Operating junction temperature rangeTj-40~125°CAbsolute Maximum Ratings
Gate Trigger Current (Quadrant I-II-III, max)IGT5 (TW) / 10 (SW) / 35 (CW) / 50 (BW)mAElectrical Characteristics (3 Quadrants)
Gate Trigger Current (Quadrant IV, max)IGT50 (B) / 70 (C)mAElectrical Characteristics (4 Quadrants)
Holding Current (max)IH10-60mAElectrical Characteristics
Latching Current (max)IL20-90mAElectrical Characteristics
Critical dV/dt (Tj=125°C, Gate open)dV/dt50-1000V/μsElectrical Characteristics
Off-state current (max)IDRM/IRRM5 (Tj=25°C) / 1 (Tj=125°C)μAStatic Characteristics
Junction to case thermal resistance (AC)Rth(j-c)1.6 - 2.7°C/WThermal Resistances (Package Dependent)

2410122027_WEIDA-BTB10-800BW_C2901073.pdf

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