High speed switching N Channel MOSFET YANGJIE YJGD20G10B featuring low RDS ON and high density cell design
Key Attributes
Model Number:
YJGD20G10B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
2 N-Channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
69W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
YJGD20G10B
Package:
PDFN5060-8L-Dual
Product Description
Product Overview
The YJGD20G10B is a high-performance N-Channel and N-Channel Complementary MOSFET from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring a split gate trench MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for various industrial applications, including DC-DC converters, power management functions, and industrial motor drives.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1
- Technology: Split gate trench MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 6.5 | A | ||
| TA=100 | 4 | A | ||||
| ID | TC=25 | 20 | A | |||
| ID | TC =100 | 12.5 | A | |||
| Pulsed Drain Current | IDM | 80 | A | |||
| Avalanche energy | EAS | 72 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 2 | W | ||
| TA=100 | 0.8 | W | ||||
| PD | TC=25 | 69 | W | |||
| PD | TC =100 | 27 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RJA | D | 50 | 60 | /W | |
| Thermal Resistance Junction-to-Case Steady-State | RJC | D | 1.5 | 1.8 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | µA |
| IDSS | VDS=100V, VGS=0V, Tj=150 | - | - | 100 | µA | |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 15 | 19 | mΩ |
| VGS=4.5V, ID=7A | - | 18 | 23 | mΩ | ||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 1.5 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 20 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 1150 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 8 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | - | 20 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | ||
| Gate-Drain Charge | Qg d | - | 2.8 | - | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | - | 32 | - | nC |
| Reverse Recovery Time | trr | - | 41 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=20A RGEN=3Ω | - | 7 | - | ns |
| Turn-on Rise Time | tr | - | 29 | - | ||
| Turn-off Delay Time | tD(off) | - | 18 | - | ||
| Turn-off fall Time | tf | - | 7 | - | ||
2411220012_YANGJIE-YJGD20G10B_C20605824.pdf
Related Products
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
