High reliability Winsok Semicon WSF6032 N Channel and P Channel MOSFET for DC DC converter circuits
Key Attributes
Model Number:
WSF6032
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
119pF
Input Capacitance(Ciss):
2.52nF
Pd - Power Dissipation:
20.8W
Gate Charge(Qg):
33.2nC@10V
Mfr. Part #:
WSF6032
Package:
TO-252-4L
Product Description
Product Overview
The WSF6032 is a high-performance N-Channel and P-Channel MOSFET featuring extreme high cell density, offering excellent RDSON and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. This device is ideal for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switches.
Product Attributes
- Brand: Winsok
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| N-Channel | P-Channel | Units | |
| BVDSS (Drain-Source Breakdown Voltage) | 60 | -60 | V |
| RDSON (Static Drain-Source On-Resistance) @ VGS=10V, ID=20A | 13.5 | 31 | m |
| ID@TC=25 (Continuous Drain Current) @ VGS=10V | 40 | -35 | A |
| IDM (Pulsed Drain Current) | 120 | -105 | A |
| EAS (Single Pulse Avalanche Energy) | --- | --- | mJ |
| PD@TC=25 (Total Power Dissipation) | 20.8 | 20.8 | W |
| RJC (Thermal Resistance Junction-Case) | 6 | 6 | /W |
| RJA (Thermal Resistance Junction-Ambient) | 75 | 75 | /W |
| Qg (Total Gate Charge) | 1.7 | 23.7 | nC |
| Ciss (Input Capacitance) | 1650 | 2270 | pF |
| Coss (Output Capacitance) | 110 | 119 | pF |
| Crss (Reverse Transfer Capacitance) | 96 | 96 | pF |
| VGS(th) (Gate Threshold Voltage) | 1.3 - 2.5 | -1.3 - -2.5 | V |
2410122023_Winsok-Semicon-WSF6032_C22751502.pdf
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