High Speed Switching Silicon Carbide MOSFET YANGJIE YJD212080NCTG1 N Channel with Fast Intrinsic Diode
Key Attributes
Model Number:
YJD212080NCTG1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+175℃
RDS(on):
80mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Input Capacitance(Ciss):
890pF
Output Capacitance(Coss):
58pF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
41nC
Mfr. Part #:
YJD212080NCTG1
Package:
TO-247
Product Description
Product Overview
The YJD212080NCTG1 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a high blocking voltage. Key features include a fast intrinsic diode with low recovery current and suitability for high-frequency operation. This product is halogen-free and RoHS compliant.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Material: Silicon Carbide
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. | Test Conditions | Note |
| Device marking code | YJD212080NCTG1 | ||||||
| Drain source voltage | VDS,max | V | 1200 | VGS=0 V, ID=100uA @ Tj=25C | |||
| Gate source voltage | VGS,max | V | -8 | +22 | Absolute maximum values | Note1 | |
| Gate source voltage | VGS,op | V | -4 | +18 | Recommended operational values | Note2 | |
| Continuous drain current | ID | A | 38 | VGS=18V, Tc=25 | Fig.18 | ||
| Continuous drain current | ID | A | 28 | VGS=18V, Tc=100 | |||
| Pulsed drain current | ID(pulsed) | A | 80 | Pulse width tp limited by Tj,max | Fig.23 | ||
| Power Dissipation | PTOT | W | 220 | Tc=25C , Tj = 175 | Fig.17 | ||
| Power Dissipation | W | 94 | Tc=110C, Tj = 175 | ||||
| Operating junction and Storage temperature range | Tj ,Tstg | C | -55 | +175 | |||
| Soldering temperature | TL | C | 260 | 1.6mm (0.063) from case for 10s | |||
| Mounting torque | TM | Nm | 0.6 | M3 screw | Maximum of mounting process: 3 | ||
| Gate threshold voltage | VGS(th) | V | 2.3 | 2.9 | 3.6 | VDS=VGS, ID= 5mA | Fig.4, 11 |
| Gate threshold voltage | V | 2.2 | VDS=VGS, ID= 5mA, Tj=175 | ||||
| Drain source breakdown voltage | V(BR)DSS | V | 1200 | VGS=0, ID=100uA | |||
| Zero gate voltage drain current | IDSS | uA | 1 | 10 | VDS=1200V, VGS= 0V | Fig.16 | |
| Gate source leakage current | IGSS | nA | 100 | VGS= 18V, VDS=0V | |||
| Current drain source on-state resistance | RDS ON | m | 77 | 85 | VGS=18V, ID=20A | Fig.5, 6, 7 | |
| Current drain source on-state resistance | m | 122 | VGS=18V, ID=20A,Tj=175 | ||||
| Internal gate resistance | Rg | 1.5 | f=1MHz | ||||
| Diode forward voltage | VSD | V | 3.9 | VGS=-4V, ISD=10A | Fig.8 | ||
| Diode forward voltage | V | 3.2 | VGS=0V, ISD=10A Tj=175 | Fig.9 | |||
| Transconductance | gf | S | 10 | VDS=16V,ID=20A | Fig.4 | ||
| Transconductance | S | 9.2 | VDS=16V,ID=20A,Tj=175 | ||||
| Input capacitance | Ciss | pF | 890 | VDS=1000V, VGS=0V, Tj=25, f=1MHz, VAC = 25mV | Fig.13, 14 | ||
| Output capacitance | Coss | pF | 58 | ||||
| Reverse capacitance | Crss | pF | |||||
| Coss stored energy | Eoss | uJ | 34 | Fig.15 | |||
| Gate source charge | Qgs | nC | 12 | VDS=800V, VGS=-4/18V, ID=20A | Fig.12 | ||
| Gate drain charge | Qg d | nC | 11 | ||||
| Gate charge | Qg | nC | 41 | ||||
| Turn on switching energy | Eon | uJ | 377 | VDD=800V, VGS=-4/+15V, ID=20A, Rg=0, L=16.7uH | Fig.21, 22 | ||
| Turn off switching energy | Eoff | uJ | 14 | ||||
| Turn on delay time | td(on) | ns | 21 | Fig.21, 22 | |||
| Rise time | tr | ns | 17 | ||||
| Turn off delay time | td(off) | ns | 14 | ||||
| Fall time | tf | ns | 8 | ||||
| Diode forward voltage | VSD | V | 3.9 | VGS=-4V,ISD=10A | Fig.8 | ||
| Diode forward voltage | V | 3.2 | VGS=0V, ISD=10A, Tj=175 | Fig.9 | |||
| Continuous diode forward current | IS | A | 38 | Tc=25 | Note1 | ||
| Reverse recovery time | trr | nS | 28.24 | VR=800V, VGS=-4V, ID=20A, di/dt=2095A/uS | |||
| Reverse recovery charge | Qrr | nC | 190 | ||||
| Peak reverse recovery current | Irrm | A | 30.08 | ||||
| Thermal resistance | RJ-C | C /W | 0.68 |
2411081727_YANGJIE-YJD212080NCTG1_C20605692.pdf
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