Low Input Capacitance and Fast Switching Speed N Channel MOSFET YANGJIE 2N7002C with RoHS Compliance
Key Attributes
Model Number:
2N7002C
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
350mA
RDS(on):
1.4Ω@4.5V,200mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Input Capacitance(Ciss):
34pF
Pd - Power Dissipation:
830mW
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
2N7002C
Package:
SOT-23(TO-236)
Product Description
Product Overview
The 2N7002C is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It is designed as a voltage-controlled small signal switch with low input capacitance and fast switching speed. This transistor offers low input/output leakage, is Moisture Sensitivity Level 1, and meets UL 94 V-0 flammability rating. It is also Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: 2N7002C
- Origin: China
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | A |
| Zero Gate Voltage Drain Current (Tj=150) | IDSS | VDS=60V, VGS=0V, Tj=150 | - | - | 100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 30V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=350mA | - | 0.7 | 1.0 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=200mA | - | 0.85 | 1.4 | |
| Diode Forward Voltage | VSD | IS=350mA, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 20 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 350 | mA |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | - | 34 | - | pF |
| Output Capacitance | Coss | - | - | 6 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 2 | - | pF |
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=1A | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.57 | - | - |
| Gate-Drain Charge | Qg d | - | - | 0.3 | - | - |
| Reverse Recovery Charge | Qrr | IF=1A, di/dt=100A/us | - | 4 | - | nC |
| Reverse Recovery Time | trr | - | - | 14 | - | ns |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=1A RGEN=3 | - | 4 | - | ns |
| Turn-on Rise Time | tr | - | - | 19 | - | - |
| Turn-off Delay Time | tD(off) | - | - | 12 | - | - |
| Turn-off fall Time | tf | - | - | 24 | - | - |
Applications
This transistor is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications (TTL/CMOS).
2410121521_YANGJIE-2N7002C_C20599361.pdf
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