High Current N Channel MOSFET Winsok Semicon WSR55N20 with Low Gate Charge and RoHS Compliant Design
Key Attributes
Model Number:
WSR55N20
Product Custom Attributes
Mfr. Part #:
WSR55N20
Package:
TO-220-3L
Product Description
Product Overview
The WSR55N20 is an N-Channel MOSFET utilizing advanced Planar MOSFET technology. It offers excellent RDS ON and low gate charge, making it suitable for battery protection and other switching applications. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions, with an MSL1 moisture sensitivity level.
Product Attributes
- Brand: Winsok
- Certifications: RoHS Compliant
- Moisture Sensitivity Level: MSL1 (per JEDEC J-STD-020D)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| BVDSS (Drain-Source Voltage) | 200 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| IS (Diode Continuous Forward Current) | TC=25°C | 55 | A | ||
| ID (Continuous Drain Current) | TC=25°C | 55 | A | ||
| ID (Continuous Drain Current) | TC=100°C | 45 | A | ||
| IDM (Pulse Drain Current) | TC=25°C | 200 | A | ||
| PD (Maximum Power Dissipation) | TC=25°C | 158 | W | ||
| RθJA (Thermal Resistance-Junction to Ambient) | 41 | °C/W | |||
| RθJC (Thermal Resistance-Junction to Case) | 0.8 | °C/W | |||
| IAS (Avalanche Current, Single pulse) | L=0.5mH | 30 | A | ||
| EAS (Avalanche Energy, Single pulse) | L=0.5mH | 800 | mJ | ||
| TSTG (Storage Temperature Range) | -55 | 150 | °C | ||
| TJ (Maximum Junction Temperature) | 150 | °C | |||
| Electrical Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250μA | 200 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS=200V , VGS=0V | 1.0 | μA | ||
| IDSS (Zero Gate Voltage Drain Current) | TJ=85°C | 30 | μA | ||
| VGS th (Gate Threshold Voltage) | VGS=VDS , IDS=250μA | 2.0 | 3.0 | 4.0 | V |
| IGSS (Gate Leakage Current) | VGS=±20V , VDS=0V | ±100 | nA | ||
| RDS ON (Drain-Source On-state Resistance) | VGS=10V , ID=15A | 48 | 55 | mΩ | |
| VSD (Diode Forward Voltage) | ISD=10A , VGS=0V | 1.4 | V | ||
| trr (Reverse Recovery Time) | IDS=20A , diSD/dt=500A/μs | 220 | ns | ||
| Qrr (Reverse Recovery Charge) | 2.0 | nC | |||
| Ciss (Input Capacitance) | VGS=0V , VDS=25V , Frequency=1.0MHz | 2926 | 3833 | pF | |
| Coss (Output Capacitance) | 371 | pF | |||
| Crss (Reverse Transfer Capacitance) | 219 | pF | |||
| Td on (Turn-on Delay Time) | VDD=100V , RL=1Ω VGEN=10V , RG=25Ω | 30 | ns | ||
| Tr (Turn-on Rise Time) | 263 | ns | |||
| Td off (Turn-off Delay Time) | 311 | ns | |||
| Tf (Turn-off Fall Time) | 222 | ns | |||
| Qg (Total Gate Charge) | VDS=30V , VGS=10V , IDS=60A | 105 | nC | ||
| Qgs (Gate-Source Charge) | 16 | nC | |||
| Qgd (Gate-Drain Charge) | 53 | nC | |||
2510131755_Winsok-Semicon-WSR55N20_C52034127.pdf
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